ISL6613BECB

ISL6613BECB Gate Drivers has been established as a high-performance device in its class, enabling designers to cost-effectively meet fast switching performance and improved gate drive capabilities from their applications. With its excellent performance and design simplicity, this part is widely used in any system levering devices such as MOSFET drivers, IGBT devices, etc. Its excellent performance is attributed to its high control gain, fast switching speed, and wide range of output voltage.

The ISL6613BECB is a fully in-line, high-side and low-side, integrated driver IC offering up to 7A of sink or source current in a small SO-8 package. It features two independently controlled outputs that can be set up to 5.5V and -5.5V respectively. It also has an advanced current and temperature protection system, enable and protection pins, dual cross-conduction protection, and low on-resistance output MOSFETs. The total gate charge per channel is minimized for specific applications, making the ISL6613BECB the right choice for any power MOSFET or IGBT switching application.

The ISL6613BECB is based on the popular N-channel enhancement mode MOSFET circuit driver developed by International Rectifier. It includes an integrated dual channel gate driver, two N-channel MOSFETs, two current protection stages and two temperature protection stages. It is a three-stage, low-voltage drive IC with the output configuration available in single-ended and push-pull designs.

The ISL6613BECB can be used to drive a wide range of power MOSFETs and IGBTs for high current switching in areas such as AC/DC converters, solar inverters, DC controllers and other power management applications. It also has a wide supply voltage range (3.0V to 16V) and an operating temperature range of -40°C to 125°C. This gate driver is designed for applications where the gate is driven from a single rail supply, making it ideal for battery operated systems such as laptops and telecom base stations.

The device requires external resistive bias and pulse programming to set the threshold and output current at which fault protection is enabled. By setting the low-voltage threshold of the drain or source pins, the gate voltage is adjusted to a high or low level depending on whether the drain or source pin is powered. This enables reliable operation of the downstream MOSFETs and IGBTs in the harshest power circuits. Since the MOSFETs and IGBTs are always supplied the same input voltage, no separate ground or voltage source is needed to power this chip.

The integrated output protection includes two current and two temperature protection stages that are enabled with intelligent logic. The current protection can be set up as an accurate current limit threshold, which is triggered only when the output current is beyond the stated limit. The temperature protection stage can be set up to detect the die temperature of the package, and will be triggered when the temperature is exceeded. This helps prevent device and system damage due to elevated temperatures.

In summary, the ISL6613BECB is a single package, integrated gate driver solution that provides excellent switching performance and reliability. Its high control gain, fast switching speed and wide output voltage range make it the perfect choice for any power system leveraging devices such as MOSFET drivers and IGBTs. Its robust protection system ensures that the device and the system remain safe in harsh powerconditioned environments.