ISL6613CB Allicdata Electronics
Allicdata Part #:

ISL6613CB-ND

Manufacturer Part#:

ISL6613CB

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Intersil
Short Description: IC MOSFET DRVR SYNC BUCK 8-SOIC
More Detail: Half-Bridge Gate Driver IC Non-Inverting 8-SOIC
DataSheet: ISL6613CB datasheetISL6613CB Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Peak Output (Source, Sink): 1.25A, 2A
Base Part Number: ISL6613
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Rise / Fall Time (Typ): 26ns, 18ns
High Side Voltage - Max (Bootstrap): 36V
Input Type: Non-Inverting
Series: --
Logic Voltage - VIL, VIH: --
Voltage - Supply: 10.8 V ~ 13.2 V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Part Status: Obsolete
Packaging: Tube 
Description

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The ISL6613CB is a high-efficiency three-channel gate driver IC intended for automotive 3-phase operating systems, such as variable valve timing systems (VVT\'s), variable speed starter motors, and other MOSFET and IGBT applications. The ISL6613CB combines the low RDS(on) MOSFET and IGBT gate drivers with a high-efficiency gate drive supply to reduce system power consumption and ensure long term system reliability. A special feature of the ISL6613CB is its advanced gate drive power control circuitry that dynamically adjusts the gate drive supply voltage to compensate for the gate capacitance rise during high-current gate drive cycles.

Key Features

  • Up to 24 V output gate drive MOSFET and IGBT
  • Gate-controlled low-dropout regulator
  • Thermal shutdown protection
  • 60 mΩ maximum on-resistance
  • 5 ms settling time

Applications

  • Variable Valve Timing (VVT) systems
  • Variable speed starter motors
  • Fuel pumps
  • Power conversion systems
  • 3-phase DC/DC converters

Working Principle

The ISL6613CB contains a high-efficiency gate drive power-on circuit that dynamically adjusts the gate drive supply voltage to compensate for the gate capacitance rise during high-current gate drive cycles. This ensures that the optimum gate drive voltage is maintained over the entire switching cycle. This reduces power losses and helps to maintain optimum switching performance and reliability. In addition, the low-dropout regulator circuit ensures that the gate drive supply voltage remains constant during light switching conditions. The ISL6613CB also includes a thermal shutdown protection circuit that disables the device in the event of an over-temperature condition. This helps to protect the device from thermal damage and ensure system reliability.

Conclusion

The ISL6613CB is a high-efficiency gate driver IC that combines low RDS(on) MOSFET and IGBT gate drivers with a high-efficiency gate drive supply to ensure long term system reliability and reduce system power consumption. The device\'s advanced gate drive power control circuitry dynamically adjusts the gate drive voltage to compensate for the gate capacitance rise during high-current gate drive cycles, while its low-dropout regulator circuit ensures that the gate drive supply voltage remains constant. The device also includes a thermal shutdown protection circuit, helping to protect it from thermal damage and ensure system reliability.

The specific data is subject to PDF, and the above content is for reference

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