
Allicdata Part #: | ISL6613CB-ND |
Manufacturer Part#: |
ISL6613CB |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Intersil |
Short Description: | IC MOSFET DRVR SYNC BUCK 8-SOIC |
More Detail: | Half-Bridge Gate Driver IC Non-Inverting 8-SOIC |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Current - Peak Output (Source, Sink): | 1.25A, 2A |
Base Part Number: | ISL6613 |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 125°C (TJ) |
Rise / Fall Time (Typ): | 26ns, 18ns |
High Side Voltage - Max (Bootstrap): | 36V |
Input Type: | Non-Inverting |
Series: | -- |
Logic Voltage - VIL, VIH: | -- |
Voltage - Supply: | 10.8 V ~ 13.2 V |
Gate Type: | N-Channel MOSFET |
Number of Drivers: | 2 |
Channel Type: | Synchronous |
Driven Configuration: | Half-Bridge |
Part Status: | Obsolete |
Packaging: | Tube |
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The ISL6613CB is a high-efficiency three-channel gate driver IC intended for automotive 3-phase operating systems, such as variable valve timing systems (VVT\'s), variable speed starter motors, and other MOSFET and IGBT applications. The ISL6613CB combines the low RDS(on) MOSFET and IGBT gate drivers with a high-efficiency gate drive supply to reduce system power consumption and ensure long term system reliability. A special feature of the ISL6613CB is its advanced gate drive power control circuitry that dynamically adjusts the gate drive supply voltage to compensate for the gate capacitance rise during high-current gate drive cycles.
Key Features
- Up to 24 V output gate drive MOSFET and IGBT
- Gate-controlled low-dropout regulator
- Thermal shutdown protection
- 60 mΩ maximum on-resistance
- 5 ms settling time
Applications
- Variable Valve Timing (VVT) systems
- Variable speed starter motors
- Fuel pumps
- Power conversion systems
- 3-phase DC/DC converters
Working Principle
The ISL6613CB contains a high-efficiency gate drive power-on circuit that dynamically adjusts the gate drive supply voltage to compensate for the gate capacitance rise during high-current gate drive cycles. This ensures that the optimum gate drive voltage is maintained over the entire switching cycle. This reduces power losses and helps to maintain optimum switching performance and reliability. In addition, the low-dropout regulator circuit ensures that the gate drive supply voltage remains constant during light switching conditions. The ISL6613CB also includes a thermal shutdown protection circuit that disables the device in the event of an over-temperature condition. This helps to protect the device from thermal damage and ensure system reliability.
Conclusion
The ISL6613CB is a high-efficiency gate driver IC that combines low RDS(on) MOSFET and IGBT gate drivers with a high-efficiency gate drive supply to ensure long term system reliability and reduce system power consumption. The device\'s advanced gate drive power control circuitry dynamically adjusts the gate drive voltage to compensate for the gate capacitance rise during high-current gate drive cycles, while its low-dropout regulator circuit ensures that the gate drive supply voltage remains constant. The device also includes a thermal shutdown protection circuit, helping to protect it from thermal damage and ensure system reliability.
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