ISL6615CBZ Allicdata Electronics
Allicdata Part #:

ISL6615CBZ-ND

Manufacturer Part#:

ISL6615CBZ

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Intersil
Short Description: IC MOSFET DRVR SYNC HF 6A 8-SOIC
More Detail: Half-Bridge Gate Driver IC Non-Inverting 8-SOIC
DataSheet: ISL6615CBZ datasheetISL6615CBZ Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Peak Output (Source, Sink): 2.5A, 4A
Base Part Number: ISL6615
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Rise / Fall Time (Typ): 13ns, 10ns
High Side Voltage - Max (Bootstrap): 36V
Input Type: Non-Inverting
Series: --
Logic Voltage - VIL, VIH: --
Voltage - Supply: 6.8 V ~ 13.2 V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Part Status: Obsolete
Packaging: Tube 
Description

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ISL6615CBZ is a high-performance gate driver integrated circuit (IC) designed and manufactured by Intersil Corporation. It is available in a miniature 8-pin SOIC package and is suitable for applications such as DC-DC converters, lighting/display controllers, bridge driver application, as well as portable power applications. It is specifically designed to control MOSFETs, IGBTs, and other Insulated-Gate Bipolar Transistor (IGBT) power semiconductor technologies.

The ISL6615CBZ belongs to the PMIC - Gate drivers category and it is ideal for driving high voltage N-channel and P-channel MOSFETs used in synchronous rectification based on DC-DC converter topologies. This device integrates two independent half-bridge drivers and contains an output stage capable of driving up to 58A each at voltages up to 20V. It also integrates bootstrap diodes and reverse current protection, eliminating the need for additional external components. The output stage is protected against over current, under current, over-temperature, and overvoltage conditions, providing reliable and robust operation.

The work principle of ISL6615CBZ is based on the traditional pulse width modulation (PWM) technique. This device is designed to take a DC voltage in and convert it into either an isolated or non-isolated output signal. This output signal is then sent to the gate of the power MOSFET, allowing the power MOSFET to turn on and off at the desired duty cycle. When the duty cycle is set to 100%, the power MOSFET becomes fully saturated and the voltage across it is equal to the input voltage. When the duty cycle of the PWM signal is reduced, the power MOSFET remains partially saturated and the voltage across it is equal to the duty cycle multiplied by the input voltage.

By controlling the PWM signal, the power MOSFET can be used to generate a square wave output, which can be used to drive other components or devices. The range of the PWM duty cycle can be adjusted from 0% to 100%, effectively controlling the output voltage. Furthermore, the PWM signal can be adjusted to a frequency of up to 1MHz, enabling high performance and reliable operation.

The protection features of the ISL6615CBZ device ensure reliable operation and prevent accidental damage from overvoltage, overcurrent and over temperature conditions. The output stage can be protected against short circuit conditions by both hardware and software. The onboard disable pin also allows for easy disabling of the output stage if necessary.

In conclusion, the ISL6615CBZ is an advanced, robust and compact gate driver IC, which is suitable for driving high voltage N-channel and P-channel MOSFETs used in synchronous rectification based on DC-DC converter topologies. It integrates two independent half-bridge drivers, reverse current protection and a range of protection features, thereby providing reliable and robust operation. Its PWM control feature allows precise control of the output voltage and frequency, making it ideal for applications such as lighting/display controllers and portable power supplies.

The specific data is subject to PDF, and the above content is for reference

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