| Allicdata Part #: | ISO5851QDWQ1-ND |
| Manufacturer Part#: |
ISO5851QDWQ1 |
| Price: | $ 3.37 |
| Product Category: | Isolators |
| Manufacturer: | Texas Instruments |
| Short Description: | DGTL ISO 5.7KV GATE DRVR 16SOIC |
| More Detail: | 2.7A, 5.5A Gate Driver Capacitive Coupling 5700Vrm... |
| DataSheet: |  ISO5851QDWQ1 Datasheet/PDF |
| Quantity: | 1000 |
| 120 +: | $ 3.06369 |
Specifications
| Rise / Fall Time (Typ): | 20ns, 20ns |
| Approvals: | CQC, CSA, TUV, UL, VDE |
| Supplier Device Package: | 16-SOIC |
| Package / Case: | 6-SOIC (0.295", 7.50mm Width) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 125°C |
| Voltage - Supply: | 15 V ~ 30 V |
| Voltage - Forward (Vf) (Typ): | -- |
| Current - Peak Output: | 2.7A, 5.5A |
| Current - Output High, Low: | 1.5A, 3.4A |
| Series: | Automotive, AEC-Q100 |
| Pulse Width Distortion (Max): | -- |
| Propagation Delay tpLH / tpHL (Max): | 110ns, 110ns |
| Common Mode Transient Immunity (Min): | 100kV/µs |
| Voltage - Isolation: | 5700Vrms |
| Number of Channels: | 1 |
| Technology: | Capacitive Coupling |
| Part Status: | Active |
| Packaging: | Tube |
Description
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ISOLATORS - GATE DRIVERSIsolators-gate drivers are special components used to control electronic switches, such as field-effect transistors or insulated-gate bipolar transistors (IGBTs), which are commonly used in power electronics, industrial and automotive applications. These drivers provide a physical isolation barrier between the low voltage and high voltage circuit, while providing fast response time for increased system performance.The ISO5851QDWQ1 is a three-phase, high-voltage, high-current, gate-driver, bidirectional, isolated power module. It is intended to be used in applications such as motor control systems, server and computer power systems, and solar inverters. The device offers reliable and accurate galvanic isolation between the low voltage circuit side and the high voltage IGBT side. Inside the power module, isolation between the voltage channels is provided by high-voltage insulated silicon dioxide (SiO2) multilayer ceramic.This gate driver module is designed to minimize losses in the high switching IGBTs driven by this module, while providing fast response times. This is achieved with its large internal deadtime and its ability to drive the IGBT anywhere between 400 to 1200V. The module also features short-circuit, over-current, and over-voltage protection as well as separate enable/disable pins for each channel, allowing for precise current control and improved system performance.The ISO5851QDWQ1 is capable of driving IGBTs with high speed and reliability, enabling high-efficiency designs. The device’s bidirectional design also allows for easy control, as the logic is inverted before the common input. The device also features signal current error LEDs, allowing for easy diagnostics and system monitoring.Overall, the ISO5851QDWQ1 is a reliable, efficient, and flexible gate driver. It provides reliable isolation between the low voltage and high voltage circuits, while providing fast response times and precise current control. This allows for maximum efficiency in motor control systems, server and computer power systems, and solar inverters.
The specific data is subject to PDF, and the above content is for reference
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