ISOPAC0211 Allicdata Electronics
Allicdata Part #:

ISOPAC0211-ND

Manufacturer Part#:

ISOPAC0211

Price: $ 142.93
Product Category:

Discrete Semiconductor Products

Manufacturer: Semtech Corporation
Short Description: DIODE GEN PURP 150V 15A
More Detail: Diode Standard 150V 15A
DataSheet: ISOPAC0211 datasheetISOPAC0211 Datasheet/PDF
Quantity: 1000
10 +: $ 128.63600
Stock 1000Can Ship Immediately
$ 142.93
Specifications
Series: --
Packaging: --
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 9A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 150V
Capacitance @ Vr, F: --
Mounting Type: --
Package / Case: --
Supplier Device Package: --
Operating Temperature - Junction: -55°C ~ 175°C
Description

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Introduction

ISOPAC0211 is a rectified diode with a single polarity. The diode has a power rectifier with a maximum current rating of 1.1A and a reverse surge current rating of 10A. The diode has a three-pin design with the Anode at the top, the Cathode at the bottom and the Mounting Tab at the center. It is a surface mount version with a maximum operating temperature of 150°C and it is highly efficient with a high surge current rating.

Application Field

ISOPAC0211 is commonly used as a rectifier in a number of different applications. Its energy efficiency makes it suitable for use in power supplies and switching power supplies where low power consumption is a must. The diode can also be used in systems with high current demands such as solar power systems, wind power systems, and hybrid vehicle systems, or any other applications where a highly efficient rectifier is required.

Working Principle

ISOPAC0211 is a rectified diode with a single polarity working on the principle of a schottky barrier. In operation, the device conducts current when there is forward voltage across it. When the voltage is reversed, the diode is reversed biased, no current can flow and the device acts as an open circuit. The schottky barrier present in the device is formed when electrons that flow from the anode to the cathode pass the metal-semiconductor junction and reach the n-type semiconductor material. This process results in a depletion region in front of the metal-semiconductor interface and this is where the electric field is generated. The generated electric field makes possible for current to flow across the junction due to the drift of electrons. When the forward voltage is applied, the electric field grows exponentially resulting in a high current flow. On the other hand, when the reverse voltage is applied, the electric field weakens exponentially, resulting in a low current flow.

Conclusion

ISOPAC0211 is a rectified single polarity diode with a high surge current rating and it is widely used in power supplies and switching power supplies due to its high energy efficiency. The diode works on the principle of the schottky barrier, where the electric field is generated when electrons pass the metal-semiconductor junction. The electric field makes possible for current to flow across the junction when either forward or reverse voltage is applied.

The specific data is subject to PDF, and the above content is for reference

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ISOPAC0619 Semtech Corp... 330.27 $ 1000 DIODE GEN PURP 1KV 10ADio...
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