IXBK55N300

Series:	BIMOSFET™
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	--
Voltage - Collector Emitter Breakdown (Max):	3000V
Current - Collector (Ic) (Max):	130A
Current - Collector Pulsed (Icm):	600A
Vce(on) (Max) @ Vge, Ic:	3.2V @ 15V, 55A
Power - Max:	625W
Switching Energy:	--
Input Type:	Standard
Gate Charge:	335nC
Td (on/off) @ 25°C:	--
Test Condition:	--
Reverse Recovery Time (trr):	1.9µs
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-264-3, TO-264AA
Supplier Device Package:	TO-264

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Introduction

IXBK55N300 is a type of insulated gate bipolar transistor (IGBT). An IGBT has characteristics of both a MOSFET and a bipolar junction transistor (BJT) and can provide a power switch with high efficiency, low gate drive power, and high switching speed. The IXBK55N300 is rated for operations at up to 300 volts, with a current rating of 55 amps at a junction temperature of 125°C.

Application Field

The IXBK55N300 IGBT is used in a wide range of applications, such as power supplies, motor controls, solar cell power inverters, welding and high voltage DC motor drives. It is also suitable for use in motor and solenoid control applications and high current/high voltage applications such as automotive and industrial power supplies that require high efficiency, low noise and high current capacity.

Structure and Principle of Operation

The IXBK55N300 is a single IGBT module consisting of an N-type or enhanced N-type IGBT chip and a built-in free-wheeling diode. It includes a series Connection of N-Channel silicon oxide-nitride-oxide-si (SiOxNyOz) layer and p-type Si substrate. The built-in diode provides reverse blocking and reverse voltage protection.The operation of the IXBK55N300 is based on bi-directional current conduction and is made possible by the use of insulated gates. The p and n-channel transistors are connected in parallel and the gates of each transistor are connected to the source. A voltage applied to the gate of the IGBT forms a channel, allowing electrical current to flow through it and thus allowing the device to be turned on and off.When turned off, the reverse blocking capability of the diode ensures that the device does not continue to conduct current. When turned on, the p and n-channel transistors act like a switch, allowing current to flow with minimal voltage drop across the device. The IGBTs are designed to handle higher voltages, current and power than BJTs, providing higher power switching performance in high voltage applications.

Conclusion

The IXBK55N300 is a reliable and robust power switching device, capable of providing high efficiency, low gate drive power, and high switching speed. Its current and voltage rating make it suitable for a variety of applications and it is also able to handle high power applications where reliability and efficiency are key issues. It is an excellent choice for anyone looking for a device that can handle high voltage applications.

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