IXBK75N170 Allicdata Electronics
Allicdata Part #:

IXBK75N170-ND

Manufacturer Part#:

IXBK75N170

Price: $ 36.08
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 1700V 200A 1040W TO264
More Detail: IGBT 1700V 200A 1040W Through Hole TO-264
DataSheet: IXBK75N170 datasheetIXBK75N170 Datasheet/PDF
Quantity: 26
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 32.79780
10 +: $ 30.66970
25 +: $ 28.36510
100 +: $ 26.59230
Stock 26Can Ship Immediately
$ 36.08
Specifications
Series: BIMOSFET™
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 200A
Current - Collector Pulsed (Icm): 580A
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
Power - Max: 1040W
Switching Energy: --
Input Type: Standard
Gate Charge: 350nC
Td (on/off) @ 25°C: --
Test Condition: --
Reverse Recovery Time (trr): 1.5µs
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264
Base Part Number: IXB*75N170
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXBK75N170 falls within the category of transistors, more specifically insulated-gate bipolar transistors (IGBTs). This type of transistor is a three-terminal power semiconductor device with both electrostatic and circuit protective functions. It is a single IGBT, meaning it contains just one switch, and its application fields range from power conversion and motor control in automotive, industrial motor, renewable energy, home appliance, railway, aerospace, and telecom industries.

One of its key features is that it has a low-loss design, meaning it keeps losses minimal due to the inverse snubberless technology adopted by the device. This makes it ideal for applications that require high speed and reduced losses. Its maximum collector-emitter voltage is 1700V (rated voltage) and its maximum collector current is 75A. It is also able to withstand a high temperature of 175°C, making it ideal for use in harsh environments. Furthermore, the device is able to achieve a high voltage blocking capability of out to 1700V.

The IXBK75N170 is able to achieve its impressive performance due to its working principle. Unlike many traditional cast-free transistors, this device works by having two separate and isolatable transistors being created by two different manufacturing processes. One of these transistors (the IGBT) performs the desired switching operation and is protected by the other (the free-wheeling diode). This allows the device to operate reliably while maintaining a low power loss.

Thus far, the IXBK75N170 is one of the best performing IGBTs on the market. Its low power loss and temperature resistance make it the perfect choice for applications ranging from railway, aerospace, renewable energy, motor control, and power conversion. Being a single IGBT, it is also able to meet the specifications necessary for a variety of different applications. In order to keep up with the increasing demand for more energy efficient and reliable devices, it is likely that the IXBK75N170 and similar designs will become the de facto standard for many industrial applications.

The specific data is subject to PDF, and the above content is for reference

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