IXDR30N120

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The IXDR30N120 power transistor is part of IXYS Corporation’s Power MOSFET family and a transistor from IXYS Corporation’s discrete MOSFET lineup. A power MOSFET is a type of insulated-gate field effect transistor (IGBT) that uses a field effect to control an electrical current. The IGBT is a three-terminal device with a control terminal, a gate terminal and a drain terminal. It is a voltage-controlled voltage-variable device, meaning that the output voltage is controlled by the voltage applied to the input. The IXDR30N120 power transistor is a single MOSFET, with the additional advantage of being able to handle higher currents.

This transistor has an absolute maximum rating (voltage, current) of 153V, 120A under full cycle for both the high and low side. It is designed to fit any standard dual package D2PAK or D-PAK form factor. The IXDR30N120 transistor is the ideal component for high-power, single-board system designs, such as industrial and automotive power supplies, variable speed motor drives, digital power applications, and solar inverters. The IXDR30N120 has a typical on state resistance of 0.015Ω, making it suitable for high current applications.

The IXDR30N120 IGBTs are manufactured using IXYS Corporation’s advanced and proprietary substrate technology, which is based on silicon-on-insulator (SOI) technology. The SOI technology provides a unique combination of high thermal conductivity, low-distortion performance, low thermal stress, and improved electrical isolation. In addition, the IXDR30N120 device has an integrated internal protection circuit which limits the current in an overvoltage situation and provides protection against short circuit and thermal runaway situations. The integrated protection circuit, combined with the fast switching speed and low gate charge, make the IXDR30N120 IGBT an ideal solution for high-power, single-board power systems.

The operating principle of this device is based on the PN junction, or forward-bias, effect. When the input voltage is applied to the device, the PN junction is forward biased, causing electrons to move from the P-region to the N-region. This creates an electric field across the PN junction, and the electric field forces electrons to move in one direction, creating the drain-source current. This current is then used to control the output voltage. The IXDR30N120 transistor also features a highly-durable SOI structure, which reduces the number of hot spots and improves reliability.

The IXDR30N120 is a reliable and high-performing transistor device suitable for a wide range of applications such as industrial and automotive power supplies, variable speed motor drives, digital power applications, and solar inverters. It is designed to meet the requirements of high-power applications and provides integrated protection against current and thermal overloading. The IXDR30N120 has a low on-state resistance for high current applications and features IXYS Corporation’s advanced and proprietary SOI substrate technology.

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