IXDR35N60BD1 Discrete Semiconductor Products

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The IXDR35N60BD1 is a single IGBT transistor from the IXDN family. It is a 600V phase control unit that is designed for use in mid-voltage inverters and motor drives in industrial and automotive applications. Primarily designed to be used in inverter motor drives, the IXDR35N60BD1 IGBT transistor can be used as a direct bridge between the low-voltage source and the high-voltage load. The technology in this transistor ensures that it is extremely efficient, with a low on-state voltage drop, making it ideally suited for high-efficiency applications.

The IXDR35N60BD1 IGBT transistor is specifically designed for mid-voltage applications and is capable of providing up to 35A of continuous current. It has a blocking voltage of 600V, and is capable of handling up to 50A of surge current. The device is also available in a variety of packages, allowing for easy integration into existing designs. In addition, it has a low tail current and can be used in applications requiring very high frequency switching.

In terms of its application field, the IXDR35N60BD1 IGBT transistor is ideal for applications involving motor drives, AC motor controllers, electric traction control, and motor control. It is designed to operate in environments with temperatures ranging from -40°C to 150°C and can be used in a variety of medium-voltage switching applications. This makes it particularly well suited for solar inverters, inverter motor drives, and motor controllers.

The IXDR35N60BD1 IGBT transistor also features fast switching, with a typical turn-on time of 8ns and a typical turn-off time of 10ns. This makes it particularly well suited for high frequency and high efficiency applications. In addition, the device operates in a wide range of temperatures and has an integrated temperature sensor for improved thermal control.

The IXDR35N60BD1 IGBT transistor works by allowing current to pass through the device when it is in the on-state. In this state, the voltage drop across the device is typically very low and is largely dependent on the current passing through it. When the device is in the off-state, it blocks current, preventing it from flowing through the device. This is made possible by the structure of the device, which features two p-type layers and one n-type layer.

The IXDR35N60BD1 is one of the most efficient and reliable IGBT transistors available, making it ideal for use in mid-voltage applications. It features extremely low on-state voltage drop, fast switching, and is available in a variety of packages. In addition, the device is capable of operating in a wide range of temperatures and provides excellent thermal performance. This makes it ideally suited for applications such as motor drives, AC motor controllers and solar inverters.

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