Allicdata Part #: | IXSK35N120AU1-ND |
Manufacturer Part#: |
IXSK35N120AU1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 1200V 70A 300W TO264 |
More Detail: | IGBT 1200V 70A 300W Through Hole TO-264AA(IXSK) |
DataSheet: | IXSK35N120AU1 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Switching Energy: | 10mJ (off) |
Base Part Number: | IXS*35N120 |
Supplier Device Package: | TO-264AA(IXSK) |
Package / Case: | TO-264-3, TO-264AA |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 60ns |
Test Condition: | 960V, 35A, 2.7 Ohm, 15V |
Td (on/off) @ 25°C: | 80ns/400ns |
Gate Charge: | 150nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 300W |
Vce(on) (Max) @ Vge, Ic: | 4V @ 15V, 35A |
Current - Collector Pulsed (Icm): | 140A |
Current - Collector (Ic) (Max): | 70A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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The IXSK35N120AU1 is a module of Field Stop IGBTs (Insulated Gate Bipolar Transistors). It is designed for high voltage and high current applications. It has a rated current of 35 A and a package of 75 x 183 mm (3" x 7"). The IXSK35N120AU1 can be used in either a single IGBT or an IGBT module.
The working principle of the IXSK35N120AU1 Field Stop IGBTs is based on the PN junction concept. The PN junction uses the electric field generated by a voltage applied between two points to control the flow of current between them. This junction has two important properties: First, the resistance of the junction varies with the applied voltage, and secondly, a small current applied across the junction can have a large effect on the current through the junction.
The IXSK35N120AU1 Field Stop IGBT works by using the PN junction to control the flow of current. The IGBT consists of two parts: the base, which provides the high voltage for the PN junction between the source and drain terminals, and the gate, which provides the low voltage for the PN junction between the gate and source terminals. The voltage-controlling part of the junction is referred to as the gate saturation region, while the current-controlling part of the junction is referred to as the base saturation region. When the voltage is applied between the gate and source terminals, it causes the gate saturation region to be “on”, and as a result, allows current to flow into the base saturation region.
The IXSK35N120AU1 Field Stop IGBT is typically used in applications such as inverters, motor drives, high voltage switching power supplies, etc. It is also used in a variety of other situations where high voltage and current with low losses is required. The low losses of the IXSK35N120AU1 Field Stop IGBT make it an ideal choice for a number of applications.
In summary, the IXSK35N120AU1 Field Stop IGBT is a module of Field Stop IGBTs specifically tailored for high voltage and high current applications. It uses the PN junction principle to control the flow of current and provides low losses for applications where high voltage and current with low losses is required. The IXSK35N120AU1 Field Stop IGBT can be used in either a single IGBT or an IGBT module, making it an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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