IXSK35N120BD1

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IGBT stands for Insulated Gate Bipolar Transistor. It is a semiconductor device which combines the elements of a transistor and a thyristor to produce an electronic device. The IXSK35N120BD1 is a single IGBT module with a forward voltage of 1200V, a current between 100 and 120A, as well as a gate drive voltage between 8 and 20V. This type of product is widely used in motor drive applications, including personal computer power supplies, such as PCs and servers.

The IGBT module has a structure consisting of two layers of semiconductor material separated by an oxide layer. The bottom layer, which is the collector, is typically made of n-type semiconductor material. The top layer, which is the emitter, is made of p-type semiconductor material. This type of device is often referred to as an Si-PIN device, short for silicon-metal-oxide-semiconductor–insulated gate bipolar transistor.

The IXSK35N120BD1 IGBT module works by allowing current to pass through the device when a forward voltage is applied across its leads. As the current increases, the gate drive voltage increases and the device delivers more power. When the current reaches the maximum current rating of the device, the device is turned off, thus limiting the current passing through the device.

The main application of the IXSK35N120BD1 IGBT module is in motor control applications. This type of device is used in high power applications, ranging from light dimmers to industrial motor drives. Its primary benefit is its ability to regulate power delivery efficiently without overloading the motor. The device is also suitable for motor control applications in motor-control circuitry, such as induction motor drives, brushless DC motor drives, and single-phase and three-phase AC motor drives.

The IXSK35N120BD1 IGBT module also has a wide range of applications in energy conversion applications, such as uninterruptible power supply (UPS) systems, photovoltaic inverters and AC/DC converters. Its low cost and good thermal performance make it an ideal choice for these applications. The device can also be used in DC-DC converters, such as those found in electric vehicle (EV) charging stations.

The IXSK35N120BD1 IGBT module is a reliable and efficient semiconductor device for high power applications. It offers good performance at an affordable cost and is an ideal choice for motor drive, energy conversion, and EV charging applications. With a good thermal performance, the device can be used in a wide range of applications.

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