J107_D75Z Allicdata Electronics
Allicdata Part #:

J107_D75Z-ND

Manufacturer Part#:

J107_D75Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 25V 625MW TO92
More Detail: JFET N-Channel 25V 625mW Through Hole TO-92-3
DataSheet: J107_D75Z datasheetJ107_D75Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25V
Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: --
Resistance - RDS(On): 8 Ohms
Power - Max: 625mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Description

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Transistors - JFETs: J107_D75Z application field and working principle

JFETs, or junction field-effect transistors, are semiconductors that are used to control the flow of electricity. They are made up of a small bar or piece of material that is placed between two conductive plates or electrodes. By varying the voltage applied to the bar or piece of material, the flow of electrons through the electrodes can be regulated. This makes JFETs ideal for applications where precise control of current is needed.

The J107_D75Z is a high-speed, low-power, n-channel enhancement mode field-effect transistor made from silicon. The J107_D75Z has a nominal voltage rating of 25 volts and a maximum power rating of 1.2 watts. It is widely used in high-precision analog applications.

JFETs work by relying on the principle of negative resistance. This works by varying an electric field along the channel from the gate to the drain. When a positive bias voltage is applied to the gate, it creates an electric field that attracts electrons in the channel toward the gate, reducing the channel resistance and allowing current to flow from the source to the drain. When the gate is biased to a negative voltage, the electric field is reversed and the electrons are forced away from the gate, increasing the channel resistance and preventing the flow of current from the source to the drain.

The most common application of JFETs is as RF amplifiers, where they can be used to amplify radio signals. JFETs can also be used as voltage-controlled resistors, voltage-controlled capacitors, temperature sensors, and analog switches. They can also be used as current sources, current limiters, and differential amplifiers.

In summary, JFETs are an extremely useful type of semiconductor for those applications requiring precise control of the electrical current. The J107_D75Z is a particularly well-suited JFET for high-precision analog applications, such as RF amplifiers and voltage-controlled resistors. It works by relying on the principle of negative resistance, wherein the strength of the electric field applied between the gate and the drain controls the current flowing from the source to the drain.

The specific data is subject to PDF, and the above content is for reference

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