| Allicdata Part #: | 1086-15614-ND |
| Manufacturer Part#: |
JAN1N2806B |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | DIODE ZENER 8.2V 50W TO204AD |
| More Detail: | Zener Diode 8.2V 50W ±5% Through Hole TO-204AD (TO... |
| DataSheet: | JAN1N2806B Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | Military, MIL-PRF-19500/114 |
| Packaging: | Bulk |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 8.2V |
| Tolerance: | ±5% |
| Power - Max: | 50W |
| Impedance (Max) (Zzt): | 0.4 Ohms |
| Current - Reverse Leakage @ Vr: | 50µA @ 5.4V |
| Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 10A |
| Operating Temperature: | -65°C ~ 175°C |
| Mounting Type: | Through Hole |
| Package / Case: | TO-204AD |
| Supplier Device Package: | TO-204AD (TO-3) |
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The JAN1N2806B is a single Zener diode with superior temperature stability, and commonly used in applications that monitor, regulate and protect circuit elements from overvoltage or current transients. By connecting the diode in series with the circuit, and adjusting its reverse breakdown voltage to the desired level, the JAN1N2806 preserves the normal operating current in the circuit.
The JAN1N2806B works using the Zener effect. The Zener effect occurs when electrons in the diode\'s P-N junction are strongly attracted to the N-type material, and this attraction creates a very strong electric field which is strong enough to force electrons from the N-type material across the junction barrier into the P-type material. This flow of current increases exponentially until the P-N junction reaches the reverse breakdown voltage (zener voltage) of the diode. Beyond this point, the Zener diode becomes a conductor in the reverse direction.
The JAN1N2806B has a reverse breakdown voltage of 5.6 volts, a maximum current of 3.2mA, and a maximum power dissipation of 500mW. It is designed to be used in applications that require a high degree of temperature stability and reliability, such as communication systems and medical instrumentation. The diode\'s temperature stability is obtained through its special Heat Sink Barrier (HSB), which allows for temperature compensating zener diode characteristics.
The JAN1N2806B also features a low capacitance, low voltage drop, low forward voltage drop and improved reverse current temperature stability. Together, these features make the JAN1N2806B ideal for use in a variety of voltage stabilization and surge protection applications. The diode is also RoHS compliant and carries a two-year product guarantee.
In conclusion, the JAN1N2806B single Zener diode offers superior temperature stability, low capacitance and low voltage drop, making it an excellent choice for use in a variety of voltage stabilization and surge protection applications. Modern applications of the JAN1N2806B include communication systems, medical instrumentation, voltage regulators and surge protection circuits.
The specific data is subject to PDF, and the above content is for reference
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JAN1N2806B Datasheet/PDF