JAN1N5530BUR-1 Allicdata Electronics
Allicdata Part #:

1086-19120-ND

Manufacturer Part#:

JAN1N5530BUR-1

Price: $ 11.78
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 10V 500MW DO213AA
More Detail: Zener Diode 10V 500mW ±5% Surface Mount DO-213AA
DataSheet: JAN1N5530BUR-1 datasheetJAN1N5530BUR-1 Datasheet/PDF
Quantity: 1000
100 +: $ 10.60450
Stock 1000Can Ship Immediately
$ 11.78
Specifications
Series: Military, MIL-PRF-19500/437
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 10V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 60 Ohms
Current - Reverse Leakage @ Vr: 50nA @ 9.1V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Supplier Device Package: DO-213AA
Description

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Diodes - Zener - Single

JAN1N5530BUR-1 Application Field and Working Principle

The JAN1N5530BUR-1 is a single Zener diode, which is one of the most popular types of semiconductor device. This type of semiconductor device is used in various applications to regulate, stabilize, convert, amplify, and isolate electrical signals. This type of device acts as a conductor in one direction, but as an insulator in the reverse direction.

The JAN1N5530BUR-1 is designed for use in various types of voltage applications, including surge protection, voltage regulation, over-voltage protection, voltage coupling, voltage clamping, and reverse bias protection.

The JAN1N5530BUR-1 is composed of a P-type layer and an N-type layer. When an electrical bias is applied to the junction of these two layers, the N-type layer becomes positively charged and the P-type layer becomes negatively charged. This creates an asymmetric potential barrier, which is known as a Zener barrier. When a voltage level greater than the breakdown voltage of the diode is applied, the potential barrier is crossed, allowing current to flow. This is known as Zener breakdown, or avalanche breakdown.

When the breakdown voltage of the JAN1N5530BUR-1 is exceeded, the device begins to conduct in both the forward and reverse directions. This allows the device to operate as a voltage regulator, as it will constantly maintain a set voltage level. This makes it ideal for use in applications such as power supply circuits and other applications that require a constant voltage level.

The breakdown voltage of the JAN1N5530BUR-1 can be determined by measuring the reverse current at a given applied voltage. The Zener voltage is the voltage at which the reverse current is at its maximum. The forward current of the JAN1N5530BUR-1 is limited due to its high breakdown voltage, meaning its applications are mainly limited to Zener-clamped circuits and reverse protection.

The JAN1N5530BUR-1 has a maximum dissipation of 1 watt, meaning it is able to dissipate 1 watt of electrical energy before it damages itself. The device also has a maximum current rating of 400mA. The maximum operating temperature of the device is 70°C, and its minimum operating temperature is -65°C.

This Zener diode offers many benefits, including low power consumption, low cost, and wide operating temperature range. The JAN1N5530BUR-1 can be used in various applications, including power supplies, data converters, voltage regulators, surge protection, voltage clamping, and reverse polarity protection. It is an ideal device for many applications that require a reliable and easy-to-use Zener diode.

The specific data is subject to PDF, and the above content is for reference

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