JAN1N3023DUR-1

Series:	Military, MIL-PRF-19500/115
Packaging:	Bulk
Part Status:	Active
Voltage - Zener (Nom) (Vz):	13V
Tolerance:	±1%
Power - Max:	1W
Impedance (Max) (Zzt):	10 Ohms
Current - Reverse Leakage @ Vr:	10µA @ 9.9V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 200mA
Operating Temperature:	-55°C ~ 175°C
Mounting Type:	Surface Mount
Package / Case:	DO-213AB, MELF
Supplier Device Package:	DO-213AB (MELF, LL41)

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Diodes-Zener-Single is a type of diode which is classified by the type of junction of multiple layers of semiconductor materials. By controlling the doping in each layer of the material, the current-voltage characteristics of the diode can be tailored. This means that the application of the diode, whether it is Zener, Small Signal, Schottky Barrier, Laser Diode, or other, will generally depend on the desired IV characteristics in the circuit in which it is used, or the current and voltage requirements.
The JAN1N3023DUR-1 diode is a single (1S) type of Zener diode, which means that the device is designed to operate with the Zener effect to create a low forward voltage drop when the forward current is greater than the Zener voltage. The JAN1N3023DUR-1 Zener diode has a maximum reverse breakdown voltage of 20 Volts. Therefore, in the forward-biased condition, the diode can operate with a maximum breakdown voltage of 20 Volts and in a reverse-biased condition it will have a reverse leakage current of no more than 1 microAmp.

Application Field of JAN1N3023DUR-1

The JAN1N3023DUR-1 Zener diode is commonly used in a variety of applications such as in voltage regulation, over-voltage protection, surge protection, and other circuits which require a low forward voltage drop when the forward current is greater than the Zener voltage. Additionally, these diodes are used to provide load unbalancing or overvoltage protection, temperature compensation or as constant current references.

Working Principle of JAN1N3023DUR-1

The JAN1N3023DUR-1 Zener diode works by creating a thin layer at the junction of two semiconductor layers. This thin layer provides the Zener effect of a low forward voltage drop when the forward current is greater than the Zener voltage. The thin layer also increases the electric field at the junction, thus decreasing the reverse breakdown voltage. When the voltage applied to the Zener diode exceeds the Zener voltage, the thin depletion layer disappears, allowing a large flow of electrons from the n-region to the p-region, thus creating a low forward voltage drop. This forward voltage drop is known as the Zener voltage. The Zener voltage depends on the doping impurities used to form the thin depletion layer. As the doping level increases, the Zener voltage increases as well. The reverse voltage behavior is also affected by the thin depletion layer. When the reverse voltage is applied to the diode, the thin layer causes the electric field to be decreased, thus increasing the reverse breakdown voltage. As the doping level decreases, the reverse voltage breakdown will also decrease. The Zener diode is a very important component in the design of power supplies, voltage regulation, over-voltage protection and surge protection circuits. The Zener diode has the significant advantage of offering a large variation in voltage and a low forward voltage drop when applied with greater than the Zener voltage.

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