JAN1N3035B-1 is a single Zener diode designed for filling mounting, for the application of protection circuits, reference circuits and voltage regulator circuits. The semiconductor material used is of high-purity silicon with a diffused junction.
The device consists of a cathode, a anode and a terminal pad. The cathode and the anode are identified by symbols, while the terminal pad is marked as the T. The cathode is the connection point for the negative potential, while the positive is connected to the anode. This allows for current flow in the forward direction only, thus providing regulated voltage.
The main function of the diode is to keep the voltage across the terminals constant by providing a low resistance when current is flowing in the forward direction. When reverse biased, the diode offers high resistance to any reverse current flow thus preventing any damage from over-voltage defects. It also provides protection against transient voltage up to the breakdown voltage
The working principle of the device is relatively simple. It rectifies the input voltage, regulating it to the proper output voltage for the connected load. This is done by using a variation of the Avalanche effect, whereby a decrease in the applied voltage causes an increase in current flow due to an increase in the forward voltage drop. This flow of current causes an Avalanche zener effect, resulting in a regulated output voltage.
The JAN1N3530B-1 is a good solution for voltage regulation, protection circuits, and reference circuits and is a suitable choice for space-saving requirements in applications where space is a limiting factor. It is characterized at a relatively low current handling capacity of 150 mA, with a maximum allowable power dissipation of 625 mW.
In conclusion, JAN1N3530B-1 is a cost-effective and efficient single Zener diode that can be used in applications where space is a limitation. With its low current handling capacity of 150 mA and maximum allowable power dissipation of 625 mW, it can provide a safe and efficient means of protecting circuit components from any over-voltage defects.
JAN1N3035B-1 Datasheet/PDF