JAN1N3595A-1

Series:	Military, MIL-PRF-19500/241
Packaging:	Bulk
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	125V
Current - Average Rectified (Io):	150mA
Voltage - Forward (Vf) (Max) @ If:	920mV @ 100mA
Speed:	Small Signal =
Reverse Recovery Time (trr):	3µs
Current - Reverse Leakage @ Vr:	2nA @ 125V
Capacitance @ Vr, F:	--
Mounting Type:	Through Hole
Package / Case:	DO-204AH, DO-35, Axial
Supplier Device Package:	DO-35
Operating Temperature - Junction:	-65°C ~ 175°C

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Introduction – JAN1N3595A-1

JAN1N3595A-1 is an advanced Schottky diode, intended for use in high-frequency and high-efficiency rectification in various systems. Its physical size and shape are designed to be compatible with standard surface mount components, and its advanced design and packaging make it a superior choice when multiple terminals are required or when very low resistance is desired.

Application Field

The JAN1N3595A-1 offers wide operating temperature range and is ideal for high temperature applications such as medical equipment, laser systems, automotive applications, computers and in other communications and data processing systems. It is also suitable for a range of high-temperature and high-voltage applications such as motor controllers, UPSs (Uninterruptible Power Supplies), and high power switching DC-DC converters. Its large current-handling capability makes it a good choice for high-current rectification, including energy transfer systems.

Working Principle

The JAN1N3595A-1 operates on the principle of avalanche breakdown, which is also known as avalanche multiplication or hot-carrier effect. In such a breakdown, electrons are accelerated to layer V of the semiconductor device due to the applied voltage. These accelerations cause the electrons to collide with the atom lattice and become free, creating a large electric field that attracts layers of electron-hole pairs across the junction into the depletion region. As the layer of electron-hole pairs grows, voltage drop across the junction increases and current conduction reduces. This effect is referred to as avalanche breakdown. Therefore, if the current drops to 0, a voltage barrier exists and an opposite-direction ‘diode’ is formed.In addition, the JAN1N3595A-1 features a reverse-bias safe-operating area. At a reverse-bias voltage of less than 10 V, the JAN1N3595A-1 will remain in the off-state and will not conduct current. This helps to ensure that the diode remains in the off-state and does not cause any damage to the system when the source power is turned off.

Advantages of the JAN1N3595A-1

The JAN1N3595A-1 offers several advantages over other rectifiers. It is designed to operate at a high frequency, making it suitable for applications that require high speed rectification, such as digital and automotive systems. Additionally, the schottky design improves its efficiency over other rectifiers, allowing increased power-handling capability and lower power loss. The unique construction and integration of the device reduce forward voltage drop, leading to higher system speed and better efficiency. In addition to this, the relatively small size and low- profile construction also make it suitable for applications that require a small form factor, such as mobile phones, thin client systems, laptops, netbooks and other portable devices. Finally, the reverse-bias safe-operating area ensures that the device will stay in the off-state even if the source power is accidentally turned off.

Conclusion

The JAN1N3595A-1 is an advanced Schottky diode designed for high-frequency and high-efficiency rectification in a range of industries, including medical equipment, automotive applications, computer systems and data-processing systems. Its unique design and construction offers several advantages over other rectifiers, including high speed operation, higher efficiency, and a reverse-bias safe-operating area for added protection. Overall, the JAN1N3595A-1 is an excellent choice for multi-terminal applications requiring high current-handling capability and very low resistance.

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