
Allicdata Part #: | 1086-16919-ND |
Manufacturer Part#: |
JAN1N3826DUR-1 |
Price: | $ 26.85 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 5.1V 1W DO213AB |
More Detail: | Zener Diode 5.1V 1W ±1% Surface Mount DO-213AB (ME... |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 24.16930 |
Series: | Military, MIL-PRF-19500/115 |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 5.1V |
Tolerance: | ±1% |
Power - Max: | 1W |
Impedance (Max) (Zzt): | 7 Ohms |
Current - Reverse Leakage @ Vr: | 3µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AB, MELF |
Supplier Device Package: | DO-213AB (MELF, LL41) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The JAN1N3826DUR-1 is a single junction, low-noise, 3.0 to 22.0 voltage Zener diode designed to protect against electrostatic discharge in electronic components and systems. The diode can also be used to provide ESD protection from electrical transients and over-voltage conditions. The device is made from an active junction of two semiconductor materials, usually silicon. To prevent current from falling back onto the protected system, a Schottky diode is typically used.
Application Field
The JAN1N3826DUR-1 is most commonly used in circuit boards, microprocessors, and other sensitive integrated circuits and components. It is also found in video and telecommunications systems, as well as in many embedded systems and applications. The diode can be used to provide a low-noise, precise voltage to the protected device, while protecting it from over-voltage conditions and ESD from external sources.
Working Principle
The JAN1N3826DUR-1 uses an "active junction" to protect electronic components from ESD. An active junction is a special semiconductor material, usually silicon, that reverses the flow of electrons when a specific voltage is reached. This reverse flow of electrons helps to protect the device from electrical transients and other over-voltage conditions. The diode also uses a Schottky diode to prevent current from flowing backwards into the protected device.
The JAN1N3826DUR-1 has a wide working voltage range: 3.0 to 22.0 volts. This range allows the device to be used in a diverse range of applications. Additionally, the low-noise operation of the device ensures reliable protection for sensitive electronic components and circuits.
Conclusion
The JAN1N3826DUR-1 is a single Zener diode designed to protect against electrostatic discharge in electronic components and systems. It is made from an active junction of two semiconductor materials, typically silicon. The device contains a special "active junction" that reverses the flow of electrons when a specific voltage is reached, and it also uses a Schottky diode to prevent current from flowing backwards into the protected system. With a wide working voltage range of 3.0 to 22.0 volts, and low-noise operation, the JAN1N3826DUR-1 is a reliable, versatile protection device for many embedded systems and applications.
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