| Allicdata Part #: | 1086-17225-ND |
| Manufacturer Part#: |
JAN1N4116D-1 |
| Price: | $ 7.74 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | DIODE ZENER 24V DO35 |
| More Detail: | Zener Diode 24V ±1% Through Hole DO-35 (DO-204AH) |
| DataSheet: | JAN1N4116D-1 Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 6.95885 |
| Series: | Military, MIL-PRF-19500/435 |
| Packaging: | Bulk |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 24V |
| Tolerance: | ±1% |
| Impedance (Max) (Zzt): | 150 Ohms |
| Current - Reverse Leakage @ Vr: | 10nA @ 18.3V |
| Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 200mA |
| Operating Temperature: | -65°C ~ 175°C |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AH, DO-35, Axial |
| Supplier Device Package: | DO-35 (DO-204AH) |
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The JAN1N4116D-1 is a single Zener diode. It is ideal for applications requiring a device with a low profile, low forward voltage drop, and high current dissipation. Its construction and design make it suitable for a number of applications, such as reverse polarity protection, over-voltage protection, voltage reference, and high-side switching. It is also used in the manufacture of some television sets and other electronic equipment.
The JAN1N4116D-1 is a two-lead device, with one lead connected to the anode and the other to the cathode. This connection configuration enables it to be used for both forward and reverse current applications. It is made from a silicon-based material which has excellent thermal properties and a low leaky current. It also has a low-power dissipation, making it suitable for electronic applications requiring low-power consumption.
The JAN1N4116D-1 utilizes a reverse-biased Zener diode in its construction. This diode is able to handle reverse current within specified limits, which is then diverted away from sensitive electronic components. In addition, the device also has a temperature coefficient of 220ppm/°C, which ensures it remains stable throughout its operating temperature range. By combining the Zener diode with a metal oxide semiconductor (MOSFET), the JAN1N4116D-1 is able to provide protection against over-voltage, under-voltage conditions, as well as reducing electrical noise.
The working principle of the JAN1N4116D-1 is based on its ability to generate a voltage drop across its junction when connected in a circuit. When the device is connected to a source of AC power, it will induce an AC current to flow through the diode and into the cathode. This current will create a voltage drop between the anode and the cathode, which is used as a reference for the device. The device is also able to generate a shunt voltage which is used as a protection mechanism against excessive voltage caused by spikes or overload conditions.
The JAN1N4116D-1 is a versatile, practical and reliable device which can be used in a variety of applications. It provides excellent protection against reverse polarity and over-voltage conditions, while at the same time providing voltage stabilization and noise reduction. Its low power dissipation, low forward voltage drop and high current dissipation make it suitable for electronic applications requiring low-power requirements, and its construction and design make it ideal for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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JAN1N4116D-1 Datasheet/PDF