
Allicdata Part #: | 1086-17241-ND |
Manufacturer Part#: |
JAN1N4117D-1 |
Price: | $ 7.74 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 25V DO35 |
More Detail: | Zener Diode 25V ±2% Through Hole DO-35 (DO-204AH) |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 6.95885 |
Series: | Military, MIL-PRF-19500/435 |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 25V |
Tolerance: | ±2% |
Impedance (Max) (Zzt): | 150 Ohms |
Current - Reverse Leakage @ Vr: | 10nA @ 19V |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 (DO-204AH) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
JAN1N4117D-1 Application Field and Working Principle
The JAN1N4117D-1 Zener diode, manufactured by Philips-Signetics, is an avalanche-capable, single-diode device that provides voltage stabilization and zener protection in a variety of applications. As a zener diode, the device is designed to use breakdown voltage, or “zener” voltage, to maintain a stable output voltage regardless of load changes, over a wide current range, from 0.5mA to 100mA. The device also utilizes an avalanche-capable junction to safely protect the device and its environment from transient voltage events, such as electrostatic discharge (ESD) and overvoltage.
The JAN1N4117D-1 is a dual-die device, with a p-type and an n-type silicon die. The p-type die is responsible for the Zener effect, while the n-type die is responsible for the avalanche-protection. The device also has a low-level leakage current, and can withstand up to 5kV ESD.
Features
- Wide breakdown voltage range: 6.1V to 82V
- Voltage stabilization range: 3V to 135V
- Reverse leakage current of 0.5mA max.
- ESD rating of 5kV
- Taped on a 12mm reel in a quantity of 25/reel
Working Principle
The JAN1N4117D-1 provides voltage stabilization and zener protection by creating a junction between the p-type and n-type die. When a forward voltage greater than the Vz breakdown voltage is applied, the junction breaks down and an avalanche of electrons is created. This avalanche, or “avalanche effect”, ensures that a stable output voltage is maintained, regardless of load changes and transient voltage events.
When the device is subjected to overload or overvoltage, the avalanche effect safely limits the voltage to a level that will not damage the device or its environment. This makes the JAN1N4117D-1 ideal for protecting sensitive electronics such as ICs, FPGAs, and ASICs.
Applications
The JAN1N4117D-1 is a versatile device with a wide array of applications. Its wide range of breakdown voltage, voltage stabilization, and ESD ratings make it suitable for a variety of sensitive electronics, including but not limited to:
- ICs, FPGAs and ASICs
- Input and output protection for ICs and circuits
- Regulated power supplies
- Automotive circuits and systems
- SMPS controllers
The specific data is subject to PDF, and the above content is for reference
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