JAN1N4117D-1 Allicdata Electronics
Allicdata Part #:

1086-17241-ND

Manufacturer Part#:

JAN1N4117D-1

Price: $ 7.74
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 25V DO35
More Detail: Zener Diode 25V ±2% Through Hole DO-35 (DO-204AH)
DataSheet: JAN1N4117D-1 datasheetJAN1N4117D-1 Datasheet/PDF
Quantity: 1000
100 +: $ 6.95885
Stock 1000Can Ship Immediately
$ 7.74
Specifications
Series: Military, MIL-PRF-19500/435
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 25V
Tolerance: ±2%
Impedance (Max) (Zzt): 150 Ohms
Current - Reverse Leakage @ Vr: 10nA @ 19V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35 (DO-204AH)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

JAN1N4117D-1 Application Field and Working Principle

The JAN1N4117D-1 Zener diode, manufactured by Philips-Signetics, is an avalanche-capable, single-diode device that provides voltage stabilization and zener protection in a variety of applications. As a zener diode, the device is designed to use breakdown voltage, or “zener” voltage, to maintain a stable output voltage regardless of load changes, over a wide current range, from 0.5mA to 100mA. The device also utilizes an avalanche-capable junction to safely protect the device and its environment from transient voltage events, such as electrostatic discharge (ESD) and overvoltage.

The JAN1N4117D-1 is a dual-die device, with a p-type and an n-type silicon die. The p-type die is responsible for the Zener effect, while the n-type die is responsible for the avalanche-protection. The device also has a low-level leakage current, and can withstand up to 5kV ESD.

Features

  • Wide breakdown voltage range: 6.1V to 82V
  • Voltage stabilization range: 3V to 135V
  • Reverse leakage current of 0.5mA max.
  • ESD rating of 5kV
  • Taped on a 12mm reel in a quantity of 25/reel

Working Principle

The JAN1N4117D-1 provides voltage stabilization and zener protection by creating a junction between the p-type and n-type die. When a forward voltage greater than the Vz breakdown voltage is applied, the junction breaks down and an avalanche of electrons is created. This avalanche, or “avalanche effect”, ensures that a stable output voltage is maintained, regardless of load changes and transient voltage events.

When the device is subjected to overload or overvoltage, the avalanche effect safely limits the voltage to a level that will not damage the device or its environment. This makes the JAN1N4117D-1 ideal for protecting sensitive electronics such as ICs, FPGAs, and ASICs.

Applications

The JAN1N4117D-1 is a versatile device with a wide array of applications. Its wide range of breakdown voltage, voltage stabilization, and ESD ratings make it suitable for a variety of sensitive electronics, including but not limited to:

  • ICs, FPGAs and ASICs
  • Input and output protection for ICs and circuits
  • Regulated power supplies
  • Automotive circuits and systems
  • SMPS controllers

The specific data is subject to PDF, and the above content is for reference

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