JAN1N4120D-1 Allicdata Electronics
Allicdata Part #:

1086-17294-ND

Manufacturer Part#:

JAN1N4120D-1

Price: $ 7.74
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 30V DO35
More Detail: Zener Diode 30V ±1% Through Hole DO-35 (DO-204AH)
DataSheet: JAN1N4120D-1 datasheetJAN1N4120D-1 Datasheet/PDF
Quantity: 1000
100 +: $ 6.95885
Stock 1000Can Ship Immediately
$ 7.74
Specifications
Series: Military, MIL-PRF-19500/435
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 30V
Tolerance: ±1%
Impedance (Max) (Zzt): 200 Ohms
Current - Reverse Leakage @ Vr: 10nA @ 22.8V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35 (DO-204AH)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

JAN1N4120D-1 is a popular single zener diode product manufactured by ON Semiconductor. This single zener diode is designed to work with low-voltage, high-speed switching applications. The diode has a maximum peak forward surge current rating of 10A, a power dissipation rating of 1.2W, and a reverse voltage rating of 40V.

The primary application for the JAN1N4120D-1 is for its low-voltage, high-speed switching operations. Its main purpose is to be used as a voltage reference diode or clamp diode in a circuit. This diode can be used in a variety of applications, such as DC-DC converters, power supplies, automotive electronics, and computer peripherals.

The JAN1N4120D-1 also features an extremely low leakage current (1µA) at its reverse breakdown voltage, which helps reduce the power dissipation across the device. It also has low series resistance and a high reverse breakdown voltage rating, making it ideal for use in a variety of applications.

The working principle of the JAN1N4120D-1 is based on the fact that when a voltage is applied to the diode, it will start to conduct current. This is due to the electric field created by the voltage applied, which will cause electrons to move from one side of the diode to the other. When the circuit reaches its reverse breakdown voltage, the electron current will be blocked and the diode will begin conducting a current.

When this current is applied to the diode, it creates a voltage reference, which can be used to control other components in the circuit. This is done by using the current through the diode as a source of voltage, and then using that voltage to activate or deactivate other components in the circuit.

The JAN1N4120D-1 is designed to be used in low voltage applications, where it can handle higher voltages than other types of zener diodes. It is also designed to have a low forward voltage drop and a low capacitance, which helps reduce power loss in the circuit. Additionally, its high reverse breakdown voltage rating allows it to handle higher voltages when used in low-voltage applications. As a result, it is ideal for use in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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