JAN1N4148UB2

Series:	Military, MIL-PRF-19500/116
Packaging:	Bulk
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	75V
Current - Average Rectified (Io):	200mA
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 100mA
Speed:	Small Signal =
Reverse Recovery Time (trr):	20ns
Current - Reverse Leakage @ Vr:	500nA @ 75V
Capacitance @ Vr, F:	4pF @ 0V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	2-SMD, No Lead
Supplier Device Package:	UB2
Operating Temperature - Junction:	-65°C ~ 200°C

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Introduction
A diode is an electrical conductor that allows current to flow in one direction, while blocking current in the opposite direction. A rectifier is an electrical component that converts alternating current (AC) to direct current (DC) using a process called rectification. The JAN1N4148UB2 is a two-terminal single rectifier diode, mainly used for switching, clamping and voltage control applications.
Application and Uses of JAN1N4148UB2
The JAN1N4148UB2 diode is designed for fast recovery time, low capacitance and low forward voltage drop. These features make the JAN1N4148UB2 an ideal component for use in high-speed, low voltage, low recovery time and low capacitance circuit designs. Applications of the JAN1N4148UB2 rectifier diode include:

• Switching and protection circuits
• Clamping and polarity protection circuits
• Voltage regulation circuits
• DC-to-DC conversion circuits
• Medical devices
• Communication systems
• Data processing systems
• Computer memory systems
• Signal processing systems
• Circuits requiring fast switching speeds

Working Principle of JAN1N4148UB2
The JAN1N4148UB2 diode works by blocking current in one direction while allowing it to flow in the opposite direction. This is achieved by using a p-n junction, where a semi-conductor such as silicon is divided into two regions, the n-type (positive) and the p-type (negative). The n-type region is produced by doping the silicon with donor impurities, such as phosphorus and arsenic, while the p-type region is created by introducing acceptor impurities, such as boron. When voltage is applied to the diode, the electrons in the n-region flow to the p-region, and the holes (a lack of electrons) in the p-region move to the n-region. This creates a depletion zone in the junction, blocking the current in the reverse direction. In the forward direction, the voltage causes the depletion zone to become narrower, allowing current to flow.
Conclusion
The JAN1N4148UB2 diode is a single rectifier diode used for switching, clamping and voltage control applications. It is designed for fast recovery time, low capacitance and low forward voltage drop, making it an ideal component for high-speed, low voltage, low recovery time and low capacitance circuit designs. The JAN1N4148UB2 works by blocking current in the reverse direction and allowing it to flow in the forward direction, using the principle of a p-n junction and the creation of a depletion zone.

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