
Allicdata Part #: | 1086-15208-ND |
Manufacturer Part#: |
JAN1N4153-1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 75V 150MA DO35 |
More Detail: | Diode Standard 75V 150mA (DC) Through Hole DO-35 |
DataSheet: | ![]() |
Quantity: | 189 |
Series: | Military, MIL-PRF-19500/337 |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 75V |
Current - Average Rectified (Io): | 150mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 880mV @ 20mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 4ns |
Current - Reverse Leakage @ Vr: | 50nA @ 50V |
Capacitance @ Vr, F: | 2pF @ 0V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Operating Temperature - Junction: | -65°C ~ 175°C |
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JAN1N4153-1 is a single Schottky barrier rectifier. As a diode rectifier, it is used for rectifying alternating current (AC) to direct current (DC). It converts AC signals to DC signals and also helps in limiting the voltage and protection from reverse connection.
Application Field
JAN1N4153-1 has a wide range of applications from power supplies to signal converters. It is commonly used in power supplies, such as regulated DC power supplies, LCD backlighting, laptop adapters, etc. It is also used in signal converters, such as xDSL splitters, signal line converters, signal fault isolators, etc. In addition, due to its low cost, high frequency capability and small size, it is also suitable in electronic products such as mobile phones, toys, and game consoles.
Working Principle
JAN1N 4153-1 operates based upon the Schottky contact principle, which is basically a form of hot electron injection. This principle states that when the voltage between the anode and cathode is forward-biased, the electrons near the anode will be injected into the conduction band of the cathode over the Schottky barrier.
These electrons will then combine with the holes near the cathode and form current. Therefore, when the anode-cathode voltage is forward-biased, current will flow from the anode to the cathode. On the other hand, when the anode-cathode voltage is reverse-biased, no current will flow. This is because the electric field in the depletion layer will block the movement of electrons across Schottky barrier.
Advantages of JAN1N4153-1
The advantages of JAN1N4153-1 include low forward voltage drop, which reduces power loss; high frequency capability, which makes it suitable for high speed signal conversion; and low cost, which is important in mass production. In addition, its compact size also allows it to fit into more compact electronic products.
Limitations of JAN1N4153-1
The main limitation of JAN1N4153-1 is its relatively lower current capability. It has a maximum forward current rating of 0.5 A, and a maximum reverse current of 100 µA. Therefore, it is only suitable for applications that do not require high power conversion or current.
Conclusion
To summarise, JAN1N4153-1 is a single Schottky barrier rectifier, which is used for rectifying AC to DC and for voltage and reverse connection protection. It is suitable for power supplies and signal converters and its low cost, high frequency capability and small size make it suitable for a range of electronic applications. However, its relatively lower current capability makes it unsuitable for applications that require high power conversion or current.
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