JAN1N4461DUS

Series:	Military, MIL-PRF-19500/406
Packaging:	Bulk
Part Status:	Active
Voltage - Zener (Nom) (Vz):	6.8V
Tolerance:	±1%
Power - Max:	1.5W
Impedance (Max) (Zzt):	2.5 Ohms
Current - Reverse Leakage @ Vr:	5µA @ 4.08V
Voltage - Forward (Vf) (Max) @ If:	1V @ 200mA
Operating Temperature:	-65°C ~ 175°C
Mounting Type:	Surface Mount
Package / Case:	SQ-MELF, A
Supplier Device Package:	D-5A

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Introduction

The JAN1N4461DUS is a single Zener diode that offers a low breakdown voltage of 6.2 V and high power dissipation of 500 mW. It is also known as an ESD (electrostatic discharge) diode, due to its ability to provide electrostatic discharge protection. This device is widely used in computers, wireless communication, and other electronic applications.

Features and Applications of JAN1N4461DUS

This single Zener diode features a low operating voltage of 6.2 V with a maximum reverse voltage rating of 5.5 V. With its fast response time, it can quickly protect against electrostatic discharges (ESD). Because of its high power dissipation and low breakdown voltage, the JAN1N4461DUS is widely used in applications that require ESD protection, such as computers, modems, and other electronic devices.The JAN1N4461DUS is also widely used in various electronic circuits. It can be used as an ESD protection diode in CMOS circuits, as it can prevent Electrostatic Sensitive Devices (ESDs) from being damaged by high voltages from the power supply rails. The device can also be used in other electronic circuits, such as automotive electronic circuits and digital circuits, for its fast switching capabilities.

Working Principle of JAN1N4461DUS

The basic working principle of the JAN1N4461DUS is its ability to act as a Zener diode. The device consists of a semiconductor material with a PN junction that creates an electric field between its two layers. When there is an excess of positive or negative charge on the semiconductor, it increases the electric field, causing a flow of current. This current is known as a "Zener breakdown".When the applied voltage exceeds the Zener breakdown voltage of the device, it starts to conduct current in the reverse direction. This current then flows to the external circuit, protecting the sensitive electronic components from being damaged.The JAN1N4461DUS is also designed to have a very fast response time. This enables it to quickly clamp and protect the sensitive electronic components from being damaged by an electrostatic discharge.

Conclusion

The JAN1N4461DUS is a single Zener diode that offers a low breakdown voltage of 6.2 V and high power dissipation of 500 mW. It is also known as an ESD (electrostatic discharge) diode, due to its ability to provide electrostatic discharge protection. This device is widely used in computers, modems, wireless communication, and other electronic applications. Its fast response time, low operating voltage, and high power dissipation make it a perfect choice for the protection of sensitive electronic components from electrostatic discharges. It can also be used in various electronic circuits, such as automotive electronic circuits and digital circuits. The working principle of the JAN1N4461DUS is based on the Zener breakdown of its PN junction and the fast response time for clamping and protecting the electronic components.

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