
Allicdata Part #: | 1086-17716-ND |
Manufacturer Part#: |
JAN1N4465DUS |
Price: | $ 21.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 10V 1.5W D-5A |
More Detail: | Zener Diode 10V 1.5W ±1% Surface Mount D-5A |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 19.17390 |
Series: | Military, MIL-PRF-19500/406 |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 10V |
Tolerance: | ±1% |
Power - Max: | 1.5W |
Impedance (Max) (Zzt): | 5 Ohms |
Current - Reverse Leakage @ Vr: | 300nA @ 8V |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | SQ-MELF, A |
Supplier Device Package: | D-5A |
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The JAN1N4465DUS is a single Zener diode specifically designed for use in consuming power solutions. It is a dual anode, unidirectional device that features good dynamic impedance characteristics, low forward voltage drop and low current leakage. This diode can be used in a broad range of currents and temperatures and is capable of withstanding high reverse bias.
The primary application field for JAN1N4465DUS is power solutions. It can be used to provide reverse bias protection against over-voltage conditions in all kinds of circuits, including power, automotive and industrial. It can also be used as an active rectifier for controlling the amount of current flowing through a circuit. This diode is also suitable for bridge rectifier circuits, AC voltage and current regulators, postregulators and negative voltage generation subsystems.
The working principle of JAN1N4465DUS is based on the fact that it has an intrinsic energy gap between the conduction and valence bands. This energy gap can be modulated when a junction is formed between conductive materials, allowing current to flow through it only in one direction. The materials used to form this junction are a semiconductor and a metal. When a forward bias is applied to the junction, the reversed biased depletion region width decreases and increases when a reverse bias is applied.
In the reverse bias region of JAN1N4465DUS, this diode exhibits a low leakage current and a reverse breakdown voltage that is dependent on the temperature and voltage applied to the junction. Its reverse leakage current remains very low under normal operating conditions, which makes it an ideal diode for power solutions. The built-in thermal protection mechanism prevents the diode from being damaged during an over-voltage situation.
By using the JAN1N4465DUS as an active rectifier in a circuit, the current that is flowing from the power source can be regulated without affecting the performance of the circuit. This is achieved by controlling the amount of current that is allowed to pass through the diode. This diode also exhibits excellent temperature stability, which makes it suitable for use in extreme conditions.
JAN1N4465DUS has a variety of features that make it a good choice for power solutions applications. Its low forward voltage drop and its reverse leakage current allow it to be used in high current situations without sacrificing performance. Its low temperature coefficient and its thermal protection mechanism make it a reliable component for power solutions.
In conclusion, the JAN1N4465DUS single Zener diode is a very versatile component for power solutions applications. Its low forward voltage drop and leak current, combined with its dynamic impedance characteristics, temperature stability and thermal protection make it an ideal component for various power solutions. It is ideal for use in AC voltage and current regulators, postregulators, negative voltage generation subsystems and bridge rectifier circuits.
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