| Allicdata Part #: | 1086-17870-ND |
| Manufacturer Part#: |
JAN1N4476DUS |
| Price: | $ 21.30 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | DIODE ZENER 30V 1.5W D-5A |
| More Detail: | Zener Diode 30V 1.5W ±1% Surface Mount D-5A |
| DataSheet: | JAN1N4476DUS Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 19.17390 |
| Series: | Military, MIL-PRF-19500/406 |
| Packaging: | Bulk |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 30V |
| Tolerance: | ±1% |
| Power - Max: | 1.5W |
| Impedance (Max) (Zzt): | 20 Ohms |
| Current - Reverse Leakage @ Vr: | 50nA @ 24V |
| Voltage - Forward (Vf) (Max) @ If: | 1V @ 200mA |
| Operating Temperature: | -65°C ~ 175°C |
| Mounting Type: | Surface Mount |
| Package / Case: | SQ-MELF, A |
| Supplier Device Package: | D-5A |
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Diodes - Zener - Single
The JAN1N4476DUS is a Zener diode specifically engineered to be utilized in applications that require a compact and highly reliable device. As a single diode, it can provide stable and reliable operation while remaining within a small footprint. Typical applications of this J Series device include voltage regulation, temperature stabilization, and low-level switching.
A Zener diode is a specialized form of diode with a heavily doped p-n junction. The heavily doped junction creates an area of reverse-biased depletion layer, allowing for the diode to function as a voltage regulator. When the voltage applied to the depletion layer is greater than the Zener voltage, the diode efficiently regulates the voltage to the Zener voltage level, providing stable operation.
The JAN1N4476DUS boasts excellent surge current capability and low leakage current, making it particularly well-suited for sampling applications and voltage regulation. The device is RoHS compliant and designed for ease of use, making it a worthwhile addition for any application where voltage regulation is needed.
The JAN1N4476DUS is a reliable low-noise solution for voltage regulation in a variety of applications. The p-n junction is dual diffused and highly doped with a low-capacitance structure, ensuring a low power consumption while maintaining excellent response speed. The device also contains a guard ring configuration to minimize areas of crop induced failure; this configuration results in excellent stability in voltage regulation over time. The low reverse bias leakage current allows the J Series device to be used with the utmost confidence in temperature-sensitive applications.
The JAN1N4476DUS is rated for a continuous reverse voltage of 25 V, with a total rated power dissipation of 350 mW. The junction temperature range is -55 to + 140°C. The device also contains a guard ring configuration to minimize areas of crop induced failure; this configuration results in excellent stability and reliable performance even in cases of prolonged operation.
In summary, the JAN1N4476DUS is a reliable single diode designed for ease of use, providing excellent performance in applications that require voltage regulation. The device boasts a highly reliable p-n junction and excellent surge current capability and low leakage current, making it an ideal choice for applications such as temperature stabilization and low-level switching.
The specific data is subject to PDF, and the above content is for reference
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JAN1N4476DUS Datasheet/PDF