| Allicdata Part #: | 1086-18071-ND |
| Manufacturer Part#: |
JAN1N4491C |
| Price: | $ 15.52 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | DIODE ZENER 120V 1.5W DO41 |
| More Detail: | Zener Diode 120V 1.5W ±2% Through Hole DO-41 |
| DataSheet: | JAN1N4491C Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 13.96550 |
| Series: | Military, MIL-PRF-19500/406 |
| Packaging: | Bulk |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 120V |
| Tolerance: | ±2% |
| Power - Max: | 1.5W |
| Impedance (Max) (Zzt): | 400 Ohms |
| Current - Reverse Leakage @ Vr: | 250nA @ 96V |
| Voltage - Forward (Vf) (Max) @ If: | 1V @ 200mA |
| Operating Temperature: | -65°C ~ 175°C |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AL, DO-41, Axial |
| Supplier Device Package: | DO-41 |
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.JAN1N4491C Application Field and Working Principle
JAN1N4491C is a single diode from Broadcom limited\'s Zener Diodes Family, with a voltage rating of 5.1V and power rating of 500mW. It is a two terminal device with a Zener breakdown voltage of 5.1V, and is designed for use in electric systems to provide overvoltage protection or a reference voltage source.
Application Field
JAN1N4491C is usually used as a voltage regulator, and this single Zener Diode can be used to provide overvoltage protection in electronic systems. It is commonly used in situations where the power supply or some other field voltage needs to be regulated, generally at 5.1V.
Moreover, this device can also be applied as a reference voltage source in designs which needs an accurate 5.1V voltage reference, such as in automotive motherboard power rails and battery management systems. Moreover, in lighting systems, where an accurate and reliable reference voltage is required; JAN1N4491C can be used as an ideal solution for this purpose.
Working Principle
The Zener breakdown process is responsible for the regulation provided by this single Zener diode. Generally speaking the junction of two dissimilar semiconductor materials, such as those used in the case of the JAN1N4491C, works as a diode. When the junction of the diode is under forward voltage, the current will pass through it, while when the junction is under reverse voltage, the current will not pass through it.
The Zener breakdown or avalanche phenomenon is based on a process of multiplication of charge carriers in the junction of the diode when a reverse voltage is applied between the terminals.The ZenerRegion of this device is engineered to provide an exactly matched breakdown voltage of 5.1V.
Under reverse bias conditions, after the breakdown point is reached, the current flowing through the diode rises exponentially with any increase in the voltage. This increase in current is considered as having a "parallel resistance" at the breakdown point of the device. Even though the Zener breakdown point has the ability to sustain high reverse voltage without damage, the power dissipation of this single Zener diode is limited to 500mW.
The specific data is subject to PDF, and the above content is for reference
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JAN1N4491C Datasheet/PDF