| Allicdata Part #: | 1086-18422-ND |
| Manufacturer Part#: |
JAN1N4625DUR-1 |
| Price: | $ 13.36 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | DIODE ZENER 5.1V 500MW DO213AA |
| More Detail: | Zener Diode 5.1V 500mW ±5% Surface Mount DO-213AA |
| DataSheet: | JAN1N4625DUR-1 Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 12.01950 |
| Series: | Military, MIL-PRF-19500/435 |
| Packaging: | Bulk |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 5.1V |
| Tolerance: | ±5% |
| Power - Max: | 500mW |
| Impedance (Max) (Zzt): | 1500 Ohms |
| Current - Reverse Leakage @ Vr: | 5µA @ 3V |
| Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 200mA |
| Operating Temperature: | -65°C ~ 175°C |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-213AA (Glass) |
| Supplier Device Package: | DO-213AA |
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Introduction
The JAN1N4625DUR-1 is a single zener diode intended for a wide range of applications, including voltage regulation, overvoltage protection, and bias circuits. The device features ultra-low reverse leakage current and an impressive temperature range, making it an ideal choice for a variety of applications.
Application Field
The JAN1N4625DUR-1 can be used as a zener diode to provide a precisely regulated output voltage by connecting it in series with a current-limiting resistor between the input voltage supply and ground. It can also be used in reverse-biased circuits, providing a degree of over-voltage protection by clamping the output voltage to its breakdown voltage. In addition, the device can be used as a bias element in circuits involving precision voltage references, such as operational amplifiers. Other applications include temperature sensing, over-voltage protection in isolated power supplies, and current limiters for AC as well as DC supplies.
Working Principle
The JAN1N4625DUR-1 consists of a single diode that is designed to operate in the avalanche breakdown mode when the reverse bias voltage across it exceeds its rated value. When operating in this mode, the reverse current increases exponentially with a small increase in the input voltage. This occurs because the diode\'s junction capacitance begins to reverse-bias itself and the avalanche effect increases the electric field within the junction region of the device. As a result, the breakdown voltage of the device can be precisely regulated within a tight tolerance range.
Technical Specifications
The JAN1N4625DUR-1 has a typical maximum reverse voltage of 24 volts, with a breakdown voltage range of 20-25 volts and a maximum rated power dissipation of 500 milliwatts. Its maximum clamping voltage is 26 volts, while its maximum reverse leakage current is 2 microamperes at 25°C and up to 24 microamps at 85°C. The device features ultra-low reverse leakage current and an impressive temperature range of -55°C to +125°C. Additionally, it is lead-free, RoHS compliant, and meets the requirements of JANTXV, JANTX, and JAND.
Conclusion
In conclusion, the JAN1N4625DUR-1 is a reliable single diode that can be used for a variety of applications, including voltage regulation, overvoltage protection, and bias circuits. It has a precise breakdown voltage and a wide operating temperature range, making it an excellent choice for applications requiring precision voltage regulation.
The specific data is subject to PDF, and the above content is for reference
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JAN1N4625DUR-1 Datasheet/PDF