Allicdata Part #: | 1086-18494-ND |
Manufacturer Part#: |
JAN1N4959C |
Price: | $ 10.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 11V 5W AXIAL |
More Detail: | Zener Diode 11V 5W ±2% Through Hole E, Axial |
DataSheet: | JAN1N4959C Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 9.21277 |
Series: | Military, MIL-PRF-19500/356 |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 11V |
Tolerance: | ±2% |
Power - Max: | 5W |
Impedance (Max) (Zzt): | 2.5 Ohms |
Current - Reverse Leakage @ Vr: | 10µA @ 8.4V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 1A |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | E, Axial |
Supplier Device Package: | E, Axial |
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JAN1N4959C Application Field and Working Principle
A JAN1N4959C is a silicon, unidirectional zener diode specifically designed to provide transient protection from electrical surges in low to high power application fields.
In modern industrial and residential applications, electrical components are constantly exposed to damaging and damaging surges due to power fluctuations, natural disasters, and other unpredictable changes in power supply. As a result, pulses of excessive electrical current can easily damage delicate components and burn out circuitries, making it necessary to protect electrical components and circuits with a reliable surge protection device. The JAN1N4959C is one such device, designed to provide superior protection for application fields ranging from low to high power.
As a unidirectional zener diode, the JAN1N4959C operates by allowing current to pass through it in one direction and clamps the current to a safe level from the other direction to protect the device from excessive current. The diode is composed of a N-type and a P-type region. The N-type region is the anode, and the P-type is the cathode. The semiconductor junction between the anode and the cathode is known as the P-N junction, which is the functional part of the device.
The working principle of the JAN1N4959C is based on the breakdown mechanism. When the forward voltage of the diode is below the Zener voltage, the diode acts as a perfect insulator, blocking the current in both directions. However, when the applied forward voltage increases beyond the Zener voltage, the P-N junction will break down, becoming a low-resistance path. This allows the current to flow freely in one direction while limiting the current in the other direction, thereby protecting the device from surge currents.
At the same time, the reverse breakdown voltage of the JAN1N4959C can be adjusted to achieve the desired protection level for various application fields. The device is designed to operate within a wide operating temperature range of -65°C to +150°C and withstand surge currents of up to 100 Ameres for 10.5 seconds, making it suitable for many low power to high power applications.
In summary, the JAN1N4959C is a unidirectional zener diode that provides superior protection to electronic components and circuits by allowing current to pass through it in one direction and clamping the current to a safe level from the other direction. The device features a wide operating temperature range, surge current amplitude, and adjustable reverse breakdown voltage, making it suitable for a range of application fields, including low power to high power applications.
The specific data is subject to PDF, and the above content is for reference
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