
Allicdata Part #: | 1086-18635-ND |
Manufacturer Part#: |
JAN1N4975D |
Price: | $ 12.80 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 51V 5W AXIAL |
More Detail: | Zener Diode 51V 5W ±1% Through Hole E, Axial |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 11.51600 |
Series: | Military, MIL-PRF-19500/356 |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 51V |
Tolerance: | ±1% |
Power - Max: | 5W |
Impedance (Max) (Zzt): | 27 Ohms |
Current - Reverse Leakage @ Vr: | 2µA @ 38.8V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 1A |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | E, Axial |
Supplier Device Package: | E, Axial |
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The JAN1N4975D is a single-zener diode designed for reliable operation over the current and temperature range specified. Its purpose is to create a low-to-medium voltage reference or to clamp and limit voltage spikes. It is commonly used for circuit protection and power supply design applications.
The JAN1N4975D has built-in safety features that make it ideal for applications like automotive and power inverters. Its two package options (TO-92 and SMA) allow for enhanced thermal performance and greater flexibility of design. The SMA package offers superior thermal transfer and higher power rating than the TO-92 version.
The JAN1N4975D is a high-voltage zener diode with a Zener voltage of just over 4V. It has a low dynamic resistance of 2.05 ohms and a high current or power carrying capability, rated at 1000 mA continuous load. The diode has very good reverse leakage, which is necessary for power supply design applications. It has a low reverse bias of (-50mV) necessary for proper operation, and a voltage coefficient of (-10mV/°C).
The working principle of the diode is based on the PN junction, which is the fundamental building block of a diode. The PN junction consists of a negatively charged (N-type) semiconductor material and a positively charged (P-type) semiconductor material that are arranged next to each other in the diode. When the PN junction is forward biased, current flows across it, allowing the diode to conduct. Reverse biasing the PN junction causes the diode to stop current flow, thus allowing it to act as a voltage reference or voltage clamp.
The JAN1N4975D can be used in a variety of applications. It is useful in power supply design as a voltage reference or clamp to prevent overvoltage damage to sensitive components. It can also be used in automotive applications to help protect against voltage spikes caused by electrical surges. In addition, the low dynamic resistance of the diode makes it an ideal choice for Bluetooth and other wireless communication systems, as it allows for faster response time.
The JAN1N4975D is well suited for reliable operation over a wide range of current and temperature conditions, making it well-suited for a variety of applications. Its low dynamic resistance and high current or power carrying capability make it a great choice for power supply design, automotive applications, and wireless communication systems.
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