JAN1N4988US Allicdata Electronics
Allicdata Part #:

JAN1N4988USS-ND

Manufacturer Part#:

JAN1N4988US

Price: $ 7.34
Product Category:

Uncategorized

Manufacturer: Semtech Corporation
Short Description: 180V ZENER 500W
More Detail: N/A
DataSheet: JAN1N4988US datasheetJAN1N4988US Datasheet/PDF
Quantity: 1000
150 +: $ 6.66861
Stock 1000Can Ship Immediately
$ 7.34
Specifications
Series: *
Part Status: Active
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The JAN1N4988US is an integrated circuit widely used in various fields of applications.It has become an essential part of many electronic devices and is widely used in the auto industry and other applications where large amounts of power is used. The JAN1N4988US enables the delivery of high power with low dissipation.

The JAN1N4988US is a dual N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) used for high current and low voltage applications. It is manufactured using advanced processes and is designed to provide superior performance when working in harsh operating conditions. It can provide high power output with low on-state resistance. The use of high-quality materials ensures the device will last longer and perform reliably.

The JAN1N4988US supports many features that make it suitable for a broad range of applications. It supports a wide voltage range of 10-45V, can handle currents up to 9A, and has a maximum power dissipation of 25W. The high current and voltage ratings allow it to be used for automotive applications, such as electric power steering systems, as well as industrial controls, motor control, and automation.

The working principle of the JAN1N4988US is based on the fact that the Gate terminal requires a threshold voltage to actuate the N-channel MOSFET. When a voltage is applied to the Gate terminal, it opens the MOSFET, allowing current to flow through it. The output voltage is determined by the voltage applied to the Gate terminal plus the on-state resistance of the device. The higher the Gate voltage is, the higher the output voltage will be. The controlled current is limited by the maximum current of the device, which is determined by the current rating of the device.

The JAN1N4988US is also incredibly efficient when it comes to energy consumption. Because it has low on-state resistance, it reduces power consumption and can generate large amounts of power with minimal power dissipation. It is also highly reliable and durable due to the use of high-quality materials. This device is also easier to operate than most power supplies, which can help save time and money.

The JAN1N4988US is an incredibly versatile device that can be used in a variety of applications, from automotive to industrial controls. It is a highly reliable, efficient, and durable device that offers superior performance and can be used for a wide range of power solutions. With its high power output, excellent energy efficiency, and dependable performance, the JAN1N4988US is one of the most popular integrated circuits used today.

The specific data is subject to PDF, and the above content is for reference

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