JAN1N5417

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The JAN1N5417 silicon diode is an electronic component that performs two distinctive functions, rectification and current limiting. To achieve these tasks, the JAN1N5417 differs from prevailing diodes on the market. With its military approved specs, the JAN1N5417 is an ideal choice for construction in demanding and high-sensitivity applications.

The main application field for the JAN1N5417 might be found in radar applications as well as high-frequency amplifiers. Moreover, owing to its low capacitance it could be used for switching RF signals. Also, due to its low noise characteristics, the JAN1N5417 could be used in the construction of high-quality audio amplifiers. Areas such as medical electronics would also benefit from the JAN1N5417 due to its low leakage properties. Lastly, the JAN1N5417 diode can be used in telecom systems, and can help to increase the reliability of solar panel systems.

The working of the JAN1N5417 is based on the PN-junction (a device formed by joining two types of semiconductor material) where a diode is formed. When voltage is applied, the P-type material donates holes for current to flow and the electrons from the N-type material move across the junction. Thus, in forward bias a diode conducts electricity. The JAN1N5417 provides high-speed rectification due to its low turn-on and turn-off time and protects other components from the excessive reverse current. Additionally, the built-in low capacitance guaranties that no signals are lost due to the diode. Furthermore, the temperature coefficient of the diode ensures that its output voltage follows the variance of the input voltage.

In conclusion, the JAN1N5417 is one of the most reliable diodes on the market, and due to its low capacitance it offers a host of advantages. Its main application field stands in radar systems, high-frequency amplifiers, high-quality audio amplifiers, solar panels and telecom systems. The JAN1N5417\'s working principle is based on the PN-junction diode, where a forward bias creates a current flow.

The specific data is subject to PDF, and the above content is for reference