
Allicdata Part #: | 1086-19426-ND |
Manufacturer Part#: |
JAN1N5623US |
Price: | $ 7.40 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 1KV 1A D5A |
More Detail: | Diode Standard 1000V 1A Surface Mount D-5A |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 6.65627 |
Series: | Military, MIL-PRF-19500/429 |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.6V @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 500ns |
Current - Reverse Leakage @ Vr: | 500nA @ 1000V |
Capacitance @ Vr, F: | 15pF @ 12V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SQ-MELF, A |
Supplier Device Package: | D-5A |
Operating Temperature - Junction: | -65°C ~ 175°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The JAN1N5623US is a single, precision, shottky barrier diode. It has a wide range of applications, ranging from digital logic to RF power sensing. It is also used in a variety of other applications, such as power rectification, voltage regulation, voltage protection, noise reduction, and high-speed switching.
This diode is constructed from gallium arsenide to provide excellent characteristics and performance. It is a surface mount device, which means it can be easily integrated into any application. The device has a low forward voltage drop, a positive temperature coefficient, and an excellent forward surge current rating. Additionally, it has a low leakage current. All of these features enable it to provide greater efficiency and reliable performance.
The JAN1N5623US is a unidirectional device, meaning that current can flow through it in only one direction. This makes it an ideal diode for applications such as high-speed switching and power rectification. The diode is designed to be used in high voltage, low current applications. It is capable of blocking voltages up to 200 volts and can handle currents up to 500 mA.
The device has a unique working principle that allows it to offer reliable protection against high voltage surges. It works by utilizing a protective coating on the anode in order to limit the maximum voltage that can be applied to the diode. The protective coating on the anode will become "fried" and break down if a high voltage surge is applied to the diode, thus providing protection against high voltage surges.
The JAN1N5623US is capable of providing both surge protection and preventing reverse current from flowing. This makes it an ideal diode for applications such as power regulation, voltage protection, and noise reduction. The diode is designed to operate at a maximum temperature of 150°C and can be used in systems with a wide range of input voltages and currents.
In addition to its excellent performance, the JAN1N5623US is also very easy to use. It can be easily installed into any system and requires no external components. This makes it a great option for applications where space is limited or efficiency is a priority. The device is also very cost effective when compared to other rectifier diodes.
The JAN1N5623US is a great choice for both commercial and industrial applications. It is a reliable and efficient diode that is capable of handling a wide range of input voltages and currents. It also offers excellent surge protection and reverse current protection, making it an ideal choice for power regulation, voltage protection, and noise reduction.
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