JAN1N6127US Allicdata Electronics

JAN1N6127US Circuit Protection

Allicdata Part #:

1086-19509-ND

Manufacturer Part#:

JAN1N6127US

Price: $ 12.10
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 56V 108.26V B SQ-MELF
More Detail: N/A
DataSheet: JAN1N6127US datasheetJAN1N6127US Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 10.99170
Stock 1000Can Ship Immediately
$ 12.1
Specifications
Voltage - Clamping (Max) @ Ipp: 108.26V
Supplier Device Package: B, SQ-MELF
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 500W
Current - Peak Pulse (10/1000µs): 4.56A
Series: Military, MIL-PRF-19500/516
Voltage - Breakdown (Min): 67.74V
Voltage - Reverse Standoff (Typ): 56V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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The JAN1N6127US is a part of the TVS-diodes or Transient-Voltage Suppressor Diodes product line related to the field of electrical power engineering. TVS-diodes, also known as transient voltage suppressors, are a form of device which is used to protect against transient voltages, such as those caused by an electrostatic discharge event (ESD). By providing an extra, low-resistance pathway for the current when an unexpected voltage spike occurs, the JAN1N6127US is used to prevent the buildup of too much voltage in the system, ultimately saving other components from being damaged.

The JAN1N6127US is a double-diode device with a 14-dip form. The device features a maximum operating temperature of 125C and a peak current rating of 400mA. Its Voltage Breakdown stands at 6V and the Voltage Clamping stands at 8.8V. In addition, the JAN1N6127US operates with a low level of operational power, ranging from 4mA at 6V Idc to 4mA at 20V Idc.

The main working principle behind the JAN1N6127US is to provide a low-resistance pathway for a current that exceeds the specified limit. When the voltage across the device increases beyond the specified limit, the voltage produced is released to the ground, subsequently releasing the excessive voltage and thus saving the other components from possibly being damaged. An ideal example of this is the protection that it provides from over voltages caused by Electrostatic Discharge events.

The application field of the JAN1N6127US is vast and includes all sorts of power supplies, personal computers, telecommunications, printers, and other electrical applications. Due to its superior specifications, the device is also able to protect itself from the heavy over currents that arise in these applications. Moreover, due to its 11th-order clamping characteristic, the JAN1N6127US is capable of providing excellent protection in peak voltage conditions. Finally, it is also capable of withstanding significant thermal shock.

In conclusion, the JAN1N6127US is a robust and versatile TVS-diode device that provides both electric and thermal transient protection, particularly in applications that may experience high voltage spikes, such as ESD events. With its superior specifications, the JAN1N6127US is an ideal option for a wide range of applications, such as in power supplies, personal computers, telecommunications, printers and other similar fields. And with its 11th-order clamping characteristic, the JAN1N6127US can provide excellent protection in peak voltage conditions.

The specific data is subject to PDF, and the above content is for reference

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