JAN1N6157 Allicdata Electronics

JAN1N6157 Circuit Protection

Allicdata Part #:

1086-19695-ND

Manufacturer Part#:

JAN1N6157

Price: $ 12.34
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 32.7V 59.1V C AXIAL
More Detail: N/A
DataSheet: JAN1N6157 datasheetJAN1N6157 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 11.22320
Stock 1000Can Ship Immediately
$ 12.34
Specifications
Voltage - Clamping (Max) @ Ipp: 59.1V
Supplier Device Package: C, Axial
Package / Case: Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 25.4A
Series: Military, MIL-PRF-19500/516
Voltage - Breakdown (Min): 40.9V
Voltage - Reverse Standoff (Typ): 32.7V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

JAN1N 6157 is a state-of-the-art TVS (Transient Voltage Suppressor) Diode developed by Nexperia. It is designed to provide protection to system components and circuit boards from transient EOS (Electrostatic Overstress) events.

Application Fields

JAN1N 6157 TVS Diode has a wide range of application across numerous industries. It is commonly used in telecom applications, consumer electronics, automotive, computer, medical, industrial, and instrumentation sectors. It offers superior protection against transient EOS events for system components, circuit boards, and other electronic circuits.

The device\'s robust design makes it suitable for use in harsh industrial environments, and its low capacitance makes it a perfect choice for high-speed signal transmission applications. Also, its low clamping voltage and low operating voltage are made it a suitable solution for a wide variety of applications.

Working Principle

The JAN1N 6157 utilizes a semiconductor junction to suppress overvoltage surges. When an EOS event occurs and the voltage exceeds the device’s trip voltage, the diode is triggered and a low-resistance path is created to divert the surge current away from the system components or circuit boards. The excess current is then clamped and redirected to the device’s anode terminal.

The device’s low clamping voltage and low operating voltage also provide excellent ESD (electrostatic discharge) protection for the components being protected. It can withstand up to 2000V of ESD without incurring any damage.

Conclusion

JAN1N 6157 TVS Diode from Nexperia is the ideal solution for transient EOS and ESD protection in a broad range of applications. It offers superior protection with low capacitance, low operating voltage, and low clamping voltage. With its robust design and proven performance, it is sure to provide reliable protection for many years to come.

The specific data is subject to PDF, and the above content is for reference

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