JAN1N6159 Allicdata Electronics

JAN1N6159 Circuit Protection

Allicdata Part #:

1086-19708-ND

Manufacturer Part#:

JAN1N6159

Price: $ 12.34
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 38.8V 73.61V C AXIAL
More Detail: N/A
DataSheet: JAN1N6159 datasheetJAN1N6159 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 11.22320
Stock 1000Can Ship Immediately
$ 12.34
Specifications
Voltage - Clamping (Max) @ Ipp: 73.61V
Supplier Device Package: C, Axial
Package / Case: Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 20.33A
Series: Military, MIL-PRF-19500/516
Voltage - Breakdown (Min): 46.08V
Voltage - Reverse Standoff (Typ): 38.8V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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A Transient Voltage Suppression (TVS) diode is a device that is designed to protect sensitive electronics devices from damaging voltages, including electrostatic discharges (ESD). The JAN1N6159 diode, manufactured by Microsemi Corporation, is an advanced diode designed for ESD protection in high speed digital data systems, consumer electronics, and other applications.

The JAN1N6159 is a bidirectional TVS diode, optimized for the protection of differential lines from ESD, transients and overvoltage events. The diode features an active low capacitance of 1.5pF with an active high capacitance of 3.2pF, allowing it to provide fast response times for signal integrity and signal quality. It also features a wide operating range from -30V to +47V, ensuring effective protection from damaging overvoltages.

In addition, the JAN1N6159 diode offers a low clamping voltage of 30V and a low reverse leakage current of less than 5µA, helping reduce power consumption in low power devices. It also has a breakdown voltage of 32V, a maximum peak pulse power of 500W and excellent surge capability.

In terms of its application field, the JAN1N6159 diode is specifically designed for use in high speed digital systems, such as those found in automotive electronics, wireless communications, consumer electronics, and military/aerospace applications. The device also offers protection for general-purpose data lines and is compatible with a broad range of I/O voltages.

The working principle of the JAN1N6159 diode involves the conductive bridging of toxic voltages. When a toxic voltage spike, caused by an ESD event or other transient, appears at the device, it bridges the external contacts, allowing the excess voltage to be discharged in a safe manner. The clamping action of the diode keeps the external contacts safe, preventing the voltage from damaging sensitive electronics.

The JAN1N6159 diode is an important component to consider when designing for ESD and transient protection in high speed digital systems. The device offers low capacitance, high surge capability, and low leakage for improved signal integrity and improved protection from damaging overvoltages. This diode is an excellent choice to help protect sensitive electronics from ESD and transient events.

The specific data is subject to PDF, and the above content is for reference

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