
Allicdata Part #: | JAN1N6311C-ND |
Manufacturer Part#: |
JAN1N6311C |
Price: | $ 14.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | VOLTAGE REGULATOR |
More Detail: | Zener Diode 3V 500mW ±2% Through Hole DO-35 (DO-20... |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 12.74060 |
Series: | Military, MIL-PRF-19500/533 |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 3V |
Tolerance: | ±2% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 29 Ohms |
Current - Reverse Leakage @ Vr: | 30µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 1.4V @ 1A |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | B, Axial |
Supplier Device Package: | DO-35 (DO-204AH) |
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The JAN1N6311C is part of the single zener diode series from ON Semiconductor. It is designed to provide a continuous flow of electrical current and provide a stable, predictable voltage reference in many different circuits and applications. The diode is rated at 1.2V and 150mW, and features a maximum power dissipation of 150mW with a temperature coefficient of 8.9mV/C. It also features a low surge current rating of 250mA and a maximum reverse current of 300nA.
The JAN1N6311C is used in a wide variety of applications such as voltage regulation, power supply filtering and rectifier circuits. It can also be used in low-voltage logic circuits and output protection devices. The diode is also used in display devices and circuit protection from over-current and over-voltage conditions.
The working principle of the JAN1N6311C is based on the p-n junction theory. When forward-biased, electric current will flow in the direction from the anode to the cathode. Upon the forward-biased junction, the voltage builds up across p-region and n-region, with the electric field developing in the junction. This electric field builds up to a point that is large enough for the electrons to jump across the junction and form a steady flow of current, this is known as the breakdown voltage of the diode.
In reverse-biased, the electric field creates a depletion region which is formed at the junction. This depletion region will widen with higher values of reverse voltages, resulting in a larger electric field that results in a greater current flow. This results in a breakdown voltage of the diode.
The JAN1N6311C is used in many different circuits and applications due to its stable voltage reference, low power dissipation and low surge current. The device is ideal for applications where a high level of reliability and accuracy is required. Its low reverse current rating of 300nA makes it ideal for use in low voltage circuits and logic circuits, while its low power dissipation of 150mW makes it perfect for high-performance devices.
In conclusion, the JAN1N6311C is a single zener diode from ON Semiconductor designed for many different applications. It is rated at 1.2V and 150mW and features a maximum power dissipation of 150mW with a temperature coefficient of 8.9mV/C. The device is used in a variety of applications, including voltage regulation, power supply filtering and rectifier circuits, as well as low-voltage logic circuits and output protection devices. It has a low reverse current rating of 300nA, making it perfect for use in low-voltage circuits, while its low power dissipation of 150mW make it suitable for a wide range of applications.
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