JAN1N6311CUS Allicdata Electronics
Allicdata Part #:

JAN1N6311CUS-ND

Manufacturer Part#:

JAN1N6311CUS

Price: $ 22.76
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: VOLTAGE REGULATOR
More Detail: Zener Diode 3V 500mW ±2% Surface Mount B, SQ-MELF
DataSheet: JAN1N6311CUS datasheetJAN1N6311CUS Datasheet/PDF
Quantity: 1000
100 +: $ 20.48540
Stock 1000Can Ship Immediately
$ 22.76
Specifications
Series: Military, MIL-PRF-19500/533
Part Status: Active
Voltage - Zener (Nom) (Vz): 3V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 29 Ohms
Current - Reverse Leakage @ Vr: 30µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Description

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Introduction

JAN1N6311CUS is a single Zener diode. It is classified by its basic structure which is composed of a PN junction and a Zener region. Zener diodes are similar to normal PN junction diode except they have a high breakdown voltage and have different characteristics. JAN1N6311CUS exhibits a highly stable Zoom Zeners breakdown voltage with excellent temperature stability over a wide range of temperature.

Application Field

JAN1N6311CUS Zener diode is widely used in various types of electrical circuits and equipment. They are used for clamping the value of an input voltage to a certain level or holding it to a voltage level. It can also be used for voltage and current control, voltage-temperature compensation, voltage stabilization and other functions.

Working Principle

The JAN1N6311CUS is a PN junction diode with a Zener region. The Zener region is made of a heavily doped P-type material which helps to create a very thin depletion region. This depletion region keeps the electric field from being totally blocked, thus allowing a current to flow across the diode.When the diode is forward biased, the Zener region acts just like the junction of a regular PN junction, allowing electrons to flow across. When the applied voltage is reversed, the potential barrier between the P-type material and N-type material decreases, due to the build-up of a reverse electric field.Once the reverse electric field becomes great enough, the Zener region between the P and N-type materials will become overly thin, creating a path of least resistance for the current. Electrons then flow freely through this path, creating a high-current breakdown which in turn limits the voltage at the junction to a very specific level. This is known as the breakdown voltage, or zener voltage. This zener voltage is determined by the Zener diode\'s construction, making JAN1N6311CUS very useful in voltage regulation applications.

Conclusion

In conclusion, JAN1N6311CUS is a single Zener diode that can be classified into Diodes - Zener - Single. Its application fields involve various types of electrical circuits and equipment, especially for voltage and current control, voltage-temperature compensation, and voltage stabilization. Its working principle is based on the ability of the Zener region to create a high-current breakdown, thus limiting the voltage at the junction to the Zener voltage which is determined by the diode\'s construction.

The specific data is subject to PDF, and the above content is for reference

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