JAN1N6318CUS

Series:	Military, MIL-PRF-19500/533
Part Status:	Active
Voltage - Zener (Nom) (Vz):	5.6V
Tolerance:	±2%
Power - Max:	500mW
Impedance (Max) (Zzt):	8 Ohms
Current - Reverse Leakage @ Vr:	5µA @ 2.5V
Voltage - Forward (Vf) (Max) @ If:	1.4V @ 1A
Operating Temperature:	-65°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SQ-MELF, B
Supplier Device Package:	B, SQ-MELF

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Overview of JAN1N6318CUS

The JAN1N6318CUS is a single Zener diode designed by Microsemi for use in high-speed applications. It has a wide range of applications, including high-power switching, RF and microwave circuits, and other power management applications. The JAN1N6318CUS has a nominal breakdown voltage of 18.0V, with a static and dynamic reverse DC voltage rating of -18V. It features a low-power conduction current of 0.5 A and reverse leakage current at 10 µA.

JAN1N6318CUS Application Field

The JAN1N6318CUS diode is designed for high-power switching, RF and microwave circuits, power management, and other applications. Its high breakdown voltage of 18.0V makes it suitable for use in high-voltage circuits. Additionally, it can be used in high-voltage switched-mode power supplies. The device also has high power dissipation, making it suitable for power-hungry applications. The low-power conduction current of 0.5A makes it an ideal choice for high-speed circuit designs.

JAN1N6318CUS Working Principle

The JAN1N6318CUS is a standard Zener diode, which works based on the principle of reverse-biased breakdown voltage. The diode is designed with a precise breakdown voltage which can be used to regulate a certain voltage within a circuit. When the applied voltage across the diode exceeds the breakdown voltage, the diode will begin to conduct current. This conducts current against its reverse-biased junction, creating an avalanche effect, which causes the diode to “breakdown” and begin to conduct. The JAN1N6318CUS is designed with an ultra-low static and dynamic reverse DC voltage rating of -18V and 0.5 A power conduction current. This enables it to handle high-speed circuits and high-power applications. The device features a high power dissipating capacity that allows it to handle large currents while protecting the application.

Conclusion

The JAN1N6318CUS is a single Zener diode designed by Microsemifor use in high-speed applications. It features a breakdown voltage of 18.0V, with a static and dynamic reverse DC voltage rating of -18V. It has a low-power conduction current of 0.5 A and reverse leakage current at 10 µA and a high power dissipation. The device is suitable for applications requiring high-power switching, RF and microwave circuits, and other power management requirements.

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