JAN1N6475

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

TVS diodes are a type of semiconductor device used to protect electronics devices against the damage that can be caused by electrostatic discharge (ESD), over voltage, and lightning transients. The JAN1N6475 is a unidirectional Trans-Zorb, or Transient Voltage Suppressor Diode, used to protect against transients. The JAN1N6475 is a popular choice for a variety of applications.

Trans-Zorbs provide protection by quickly clamping transient voltages to a safe voltage. Trans-Zorbs offer fast response time, low leakage current, and a wide operating temperature range. They are among the most efficient and cost effective solutions to protect sensitive electronic components from transient voltages.

The JAN1N6475 is a preferred choice of TVS diode for many applications because it offers a low on-state resistance, a reverse breakdown voltage of 47 volts, low capacitance, and a compact size. It is particularly suited for high frequency circuits, as it has a fast surge response time. Its peak pulse current rating of 11.0A and its peak pulse power rating of 745W make it suitable for high power applications.

The JAN1N6475 is typically used in automotive, medical, and consumer electronics applications, as well as in electronics systems with high speed digital circuits. It is suitable for use as a circuit protector in a wide range of commercial and industrial applications, such as power supplies, communications systems, and computer systems.

The primary purpose of a TVS diode is to protect delicate electronic components and circuits from overvoltage damage. As such, the JAN1N6475 is designed to clamp the voltage of transients to a safe level. When a surge voltage exceeds the breakdown voltage, the JAN1N6475 will conduct the voltage away from the components, protecting them from damage.

The breakdown voltage of a TVS diode is determined by a variety of factors, such as the peak pulse power, pulse voltage, and leakage current. The peak pulse power of the JAN1N6475 is 745W, its pulse voltage is 15V, and its leakage current is 5µA. These ratings make the JAN1N6475 suitable for many applications requiring protection from voltage transients.

In addition to its breakdown voltage, the JAN1N6475 also offers several other features that make it suitable for various applications. It has a fast response time and a wide operating temperature range, making it suitable for a wide range of applications. Its small size and wide range of package options make it easy to integrate into a wide variety of circuits and systems.

The JAN1N6475 is a popular choice of TVS diode. Its wide range of features and low cost make it a suitable choice for many applications requiring protection from voltage transients. Its fast response time, low leakage current, and wide operating temperature range make it particularly suitable for many high speed digital circuits, power supplies, communications systems, consumer electronics, and automotive applications.

The specific data is subject to PDF, and the above content is for reference