Allicdata Part #: | 1086-2304-ND |
Manufacturer Part#: |
JAN1N6627 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 440V 1.75A AXIAL |
More Detail: | Diode Standard 440V 1.75A Through Hole |
DataSheet: | JAN1N6627 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/590 |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 440V |
Current - Average Rectified (Io): | 1.75A |
Voltage - Forward (Vf) (Max) @ If: | 1.35V @ 1.2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 2µA @ 440V |
Capacitance @ Vr, F: | 40pF @ 10V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | E, Axial |
Operating Temperature - Junction: | -65°C ~ 150°C |
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The JAN1N6627 Diode is categorized in the Diodes - Rectifiers - Single family and is widely used for power conversion and system-level voltage regulation. It is most useful for applications requiring reverse blocking, rectification, and/or voltage isolation. The JAN1N6627 is an ideal diode because it has a low forward voltage drop, low leakage current, and low on-resistance making it an efficient and cost-effective choice for a majority of rectifier applications.
A typical application of the JAN1N6627 is mobile charging and phone charging circuits. It is used to connect the power cord from the wall plug to the mobile device. The diode prevents the power from running backwards and allows the current to only flow in the desired direction. The diode also reduces the risk of damage to the mobile device by protecting it from overvoltages.
The JAN1N6627 is a Schottky diode, meaning it has a lower forward voltage drop making it more efficient than normal diodes. It also has an ultra-fast recovery time, enabling a higher frequency range operation. Furthermore, its low capacitance makes it suitable for data signals, providing high-speed voltage isolation.
In terms of physical characteristics, the JAN1N6627 is available in a plastic small-outline package. The small-outline package increases mounting density and gives the device a space-saving profile. It is also resistant to temperature and moisture, making it rugged and reliable for use in harsh environments.
In terms of power handling capacity, the JAN1N6627 exhibits a low thermal resistance resulting in a low internal temperature rise when used in the desired applications. The power handling capacity of the diode is 45.3A and the maximum reverse voltage is 600V. The diode also exhibits excellent power dissipation capability and can safely operate under a maximum ambient temperature of 127°C.
The working principle of the JAN1N6627 is quite simple. When connected to a power source, a small amount of current flows through the diode and creates a voltage drop, allowing the current to pass through in one direction only, while blocking current in the reverse direction. The voltage drop determines the level of power being transferred. The diode is able to block power effectively and efficiently.
In conclusion, the JAN1N6627 is a single diode and is used in a variety of power conversion applications. It offers a low forward voltage drop, a low leakage current, low on-resistance, and an ultra-fast recovery time. Furthermore, it is available in a small-outline package, making it suitable for use in confined spaces. The diode is also capable of safely handling power up to 45.3A and 600V. The JAN1N6627\'s working principle is straightforward, and its capabilities make it an ideal solution for many power conversion and protection requirements.
The specific data is subject to PDF, and the above content is for reference
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