JAN1N6629US

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JAN1N6629US is a single rectifier diode available in small, Surface Mount (SMT) packages which makes it a rugged option for a wide range of automated component placement systems. It features an anode to cathode breakdown voltage of 200 V, a peak forward surge current of 1.25 A, a maximum dynamic capacitance of 0.03 pF, and an average rectified current of 1.5 A.

Application Field

The JAN1N6629US is an easily available, cost-effective alternative to popular brands when it comes to single rectifier diodes. Its application field includes various power management, converters, inverters, line filters, power supplies, and other products leveraged in various industries, such as appliances, automotive, IoT, industrial, and medical.

The diode can be used for multiple rectifier functions, where its low forward voltage drop and improved current handling capacity helps increase performance and efficiency. It can also be utilized in other applications, such as high-speed rectifier and polarity protection, soft start and snubber circuits, analog-to-digital converters, over and under voltage protection, and load balancing.

Working Principle

The JAN1N6629US single rectifier diode has two states – forward and reverse biased – which are responsible for its conducting and non-conducting properties, respectively. In forward bias, the electrical current flows through the P and N junction layers at a relatively low resistance and the diode is termed forward-biased because of the polarity of the applied voltage. Conversely, in the reversed bias state, the diode acts as a block for current flow and the diode is referred to as reverse-biased because of the voltage polarity.

The forward-biased operation of the diode is characterized by its low forward voltage drop, a measure of the energy lost due to current passing through a semiconductor material from anode to cathode. The JAN1N6629US boasts a Vf of 0.7 V, making it a suitable choice for applications where reduced energy losses are highly desired.

Furthermore, the JAN1N6629US features a low dynamic capacitance, meaning it can be rapidly switched between on and off states with minimal losses. This is an important consideration in switching power supplies and other high-frequency devices, where the speed at which a semiconductor device switches is critical. This low capacitance helps reduce the switching time of the diode, allowing for faster operation.

Conclusion

The JAN1N6629US is a robust and reliable single rectifier diode for various power management, conversion and inversion applications. Its low forward voltage drop, high surge current capability and low dynamic capacitance make it ideal for high-frequency applications that require rapid switching. Its small package size also makes it a great choice for automated placement systems where space is limited. The JAN1N6629US is a great choice for cost-effective, reliable performance.

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