
Allicdata Part #: | 1086-15644-ND |
Manufacturer Part#: |
JANTX1N2845B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 180V 50W TO204AD |
More Detail: | Zener Diode 180V 50W ±5% Through Hole TO-204AD (TO... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/114 |
Packaging: | Bulk |
Part Status: | Discontinued at Digi-Key |
Voltage - Zener (Nom) (Vz): | 180V |
Tolerance: | ±5% |
Power - Max: | 50W |
Impedance (Max) (Zzt): | 90 Ohms |
Current - Reverse Leakage @ Vr: | 10µA @ 136.8V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 10A |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | TO-204AD |
Supplier Device Package: | TO-204AD (TO-3) |
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JANTX1N2845B is a single, denoted by “JANTX1N2845B”, within the Diodes - Zener - Single category. It is offered in DO-35 package, and can operates over a range of temperatures from -65°C to 150°C.
The JANTX1N2845B features a breakdown voltage of 18.2 V at an irradiation of 1 x 10-4 W/cm, and an power dissipation (non repetitive) of 0.2 W, with a maximum surge current rating of 35 A. Its current is maximal at a working temperature of 25°C, with a minimum at an operating temperature of -65°C. The total capacitance of the device is commonly considered negligible.
Its low power dissipation and its wide temperature range make the JANTX1N2845B an ideal component for laser diode protection, power-supply sequencing, sensor protection, and row-level isolation, as well as battery-powered device isolation, among other uses. The device can be used as a replacement part for current-limiting resistor, offering better isolation, with improved power efficiency, longer life, and better isolation.
In terms of its working principle, the JANTX1N2845B draws a small amount of current to maintain a given breakdown voltage. It is designed to have a large enough breakdown voltage to prevent current from flowing through it, unless a greater voltage is applied, causing the device\'s current to flow. The device serves as a voltage regulator for loads that require a lower voltage than the source is providing.
The breakdown voltage of a Zener diode is determined by its structure and has a direct relationship to the width of the depletion region. The maximum peak current depends on the power rating and the applied voltage, with higher voltages resulting in higher peak currents. In contrast, the zener\'s cold temperature performance decreases when the voltage is increased.
The breakdown voltage of the JANTX1N2845B can be adjusted through temperature-compensation, which is achieved by using an additional temperature-sensing device, such as an NTC thermistor, which can be connected between the diode\'s cathode and the power supply. This allows the breakdown voltage to be regulated to a desired level and also ensures that the device will perform as expected in extreme temperature conditions.
In conclusion, the JANTX1N2845B is a single Zener diode, ideal for use in temperature-sensitive applications, such as laser diode protection and power-supply sequencing. Its low power dissipation and wide temperature range make it particularly well-suited for these types of applications. Furthermore, its breakdown voltage can be adjusted through temperature-compensation, increasing its versatility.
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