JANTX2N4859

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The JANTX2N4859 is a high-purity silicon junction-gate field effect transistor (JFET) manufactured by Central Semiconductor Corp. It is designed for general-purpose switching applications and is capable of delivering high power output up to a maximum operating temperature of 150°C. The JANTX2N4859 provides low-power dissipation and high drain-source current at a low cost, making it well-suited for a wide range of applications.

The JANTX2N4859 has an N-channel type construction, meaning it essentially acts like an on/off switch that can either denpromote current or resist the flow of current. It operates by applying an electrical field to an N-type semiconductor region. With an electric field applied, the electrons in the semiconductor are repelled by the field lines and leave the depletion region. This reduces the current flowing through the depletion region, leaving the negative voltage (typically 0.2 volts) across the gate and source regions.

The device has a source to gate breakdown voltage of 30V and a gate to source breakdown voltage of 15V. This breakdown voltage determines the minimum electric field at which the device conducts current. It also has a gate to source capacitance of 1.3 pF, which determines the time constant of the switching circuit, and a drain to source drain current of 0.5 mA, which determines the maximum power output.

The JANTX2N4859 offers good performance, making it suitable for use in a variety of applications including power switch applications in power supplies, switching circuits and thyristor drivers, as well as radio frequency tuners, amplifiers and other circuits requiring high voltage and current capability. The device can be used in low-voltage circuits, such as battery-powered systems, automotive applications, and solar cells.

In addition, the JANTX2N4859 can be used as a logic-level-shifting device in switching circuits, and is suitable for AC or DC operation. Its high current rating makes it suitable for use in high-current circuits, such as automotive and heavy-duty industrial applications. The device has excellent temperature stability and can operate in a wide temperature range from -65°C to 150°C.

Overall, the JANTX2N4859 is a high-impurity silicon-junction-gate field effect transistor suitable for a wide range of applications, including power switching, logic-level-shifting, and other high current applications. Its high current rating and excellent temperature stability make it a cost-effective solution for various applications.

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