JANTX1N2982B Allicdata Electronics
Allicdata Part #:

1086-15660-ND

Manufacturer Part#:

JANTX1N2982B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 18V 10W DO213AA
More Detail: Zener Diode 18V 10W ±5% Stud Mount DO-213AA (DO-4)
DataSheet: JANTX1N2982B datasheetJANTX1N2982B Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/124
Packaging: Bulk 
Part Status: Discontinued at Digi-Key
Voltage - Zener (Nom) (Vz): 18V
Tolerance: ±5%
Power - Max: 10W
Impedance (Max) (Zzt): 4 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 13.7V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 2A
Operating Temperature: -65°C ~ 175°C
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-213AA (DO-4)
Description

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Diodes - Zener - Single: JANTX1N2982B Application Field and Working Principle

The JANTX1N2982B is a series of single Zener diode devices designed to provide efficient, economical and reliable operation of electronic circuits. It is available in a wide range of voltage levels, from 1.5 V to 150 V, with current ratings from 1 to 5 amperes. Features of the device include improves temperature stability and protection against power surge. It has excellent electrical performance with low operating and reverse breakdown voltages.

Application Fields

The main application of the JANTX1N2982B is in the area of electronic circuit protection such as automotive, industrial and general electronics. It can be used in the following applications:

  • Antenna protection
  • Over-voltage protection
  • Over-current protection
  • Surge protection
  • Lightning protection
  • Circuit protection
  • High voltage switch mode power supplies
  • Battery charging

Working Principle

The JANTX1N2982B is a single Zener diode device based on the principle of avalanche breakdown, featuring a very low operating and reverse breakdown voltages. When forward biased, the junction region of the device will experience a decrease of potential barrier size due to the avalanche breakdown. The current then flows from the anode to the cathode of the diode, allowing the transfer of the potential variation from one junction to the other.

When the diode is reverse biased, the PN junction is formed and the potential barrier increases. The current then cannot flow from the anode to the cathode and instead will stay within the junction region. In this situation, the electrical energy stored in the junction region will reach a point where the avalanche breakdown occurs, resulting in a significant portion of the current being dissipated as heat.

The Zener breakdown is the property of the JANTX1N2982B device that makes it suitable for overvoltage protection and lightning protection. When the voltage at the diode exceeds the Zener voltage, a large amount of current will be quickly released from the device, thus protecting any component connected behind the diode.

Conclusion

The JANTX1N2982B is a single Zener diode device designed for efficient, economical and reliable operation of electronic circuits. It is suitable for applications such as antenna protection, over-voltage protection, over-current protection, surge protection, lightning protection, circuit protection, high voltage switch mode power supplies and battery charging. The principle of operation of the JANTX1N2982B is based on the avalanche breakdown, resulting in low operating and reverse breakdown voltages and excellent electrical performance.

The specific data is subject to PDF, and the above content is for reference

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