
Allicdata Part #: | 1086-15680-ND |
Manufacturer Part#: |
JANTX1N3011B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 150V 10W DO213AA |
More Detail: | Zener Diode 150V 10W ±5% Stud Mount DO-213AA (DO-4... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/124 |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 150V |
Tolerance: | ±5% |
Power - Max: | 10W |
Impedance (Max) (Zzt): | 175 Ohms |
Current - Reverse Leakage @ Vr: | 10µA @ 114V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 2A |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Stud Mount |
Package / Case: | DO-203AA, DO-4, Stud |
Supplier Device Package: | DO-213AA (DO-4) |
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Diodes are electronic components used to control the flow of electricity in a circuit. Zener diodes are special types of diodes that act as both current regulators and voltage regulators. A JANTX1N3011B Diode is a Zener diode used in a variety of applications that require only 0.35 volts reverse breakdown voltage. It was designed by the JANTX1N technology to provide a stable voltage reference in the range of 5.5 to 6.5 volts.
The JANTX1N3011B is a glass encapsulated single Zener diode with a glass to metal seal construction. The diode has a reverse leakage current of 0.4µA max and a reverse recovery time of 5µs max. The diode is offered in a through hole, axial leaded, single and dual configurations. The diode has a total power dissipation of 70mW. The diode has a maximum working temperature of 85°C.
JANTX1N3011B is widely used in products that need to protect circuits and sensitive electronic components against voltage spikes or transients. The diode is found in electronic components such as voltage regulators, surge protectors, TV sets, and other electronic circuits. It is also used in switching power supplies and in DC-DC converters. It is also found in telephone circuits, audio systems, automotive and industrial applications, and other applications.
The working principle of the JANTX1N3011B diode is based on the principle of overcoming the forward voltage barrier. A JANTX1N3011B diode is constructed in such a way that it has two layers, one layer is the N-type and the other is the P-type material. The P-type and N-type materials are placed in direct contact. When electrons travel from the N-type material to the P-type material, they experience a barrier that must be surmounted.
When the applied voltage is greater than the barrier voltage, current flows through the P-N junction and the diode starts to conduct. In the case of the JANTX1N3011B diode, the reverse voltage breakdown voltage is 0.35 volts. At this voltage, the diode starts to conduct in the reverse direction and regulate the voltage in the circuit.
In conclusion, the JANTX1N3011B is a single Zener diode used in a variety of applications requiring 0.35 volts reverse breakdown voltage. It is widely used in products that need to protect circuits and sensitive electronic components against voltage spikes or transients. The working principle of the diode is based on overcoming the forward voltage barrier. With its stable voltage reference in the range of 5.5 to 6.5 volts, the JANTX1N3011B diode is an ideal choice for voltage regulation applications.
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