Allicdata Part #: | 1657-1003-ND |
Manufacturer Part#: |
JANTX1N3035B-1 |
Price: | $ 8.81 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | DIODE ZENER 43V 1W DO41 |
More Detail: | Zener Diode 43V 1W ±5% Through Hole DO-41 |
DataSheet: | JANTX1N3035B-1 Datasheet/PDF |
Quantity: | 148 |
1 +: | $ 8.00730 |
10 +: | $ 7.27650 |
100 +: | $ 6.18502 |
500 +: | $ 5.27547 |
Series: | Military, MIL-PRF-19500/115 |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 43V |
Tolerance: | ±5% |
Power - Max: | 1W |
Impedance (Max) (Zzt): | 70 Ohms |
Current - Reverse Leakage @ Vr: | 10µA @ 32.7V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -55°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-41 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A JANTX1N3035B-1 is a single zener diode suited for radio frequency and signal applications. It contains a barrier layer between the P and N junctions that offers excellent signal and frequency response. Its distinctive shoulder that eliminates special tuning makes it easier to use than a conventional zener diode. Its reliable power performance over the military temperature range makes it suitable in applications where temperature extremes occur. It can also provide stable voltage regulation.
The JANTX1N3035B-1 contributes to the electrical performance of a system by providing voltage regulation, signal passage, switch operation, interference suppression, and power distribution. It is well suited for use in high power systems due to its low dynamic resistance and fast switching times between on and off states. It also has low leakage current and a wide range of temperature operation, making it suitable for use in low power and other sensitive systems.
The JANTX1N3035B-1 is designed in a very compact TO-92 package and features a barrier layer between the P and N Rectilyser electrodes. The barrier provides excellent frequency response and supresses undesired signals from entering the system, allowing for higher-grade performance in critical applications. The P-N junction is designed with a very low dynamic resistance, allowing for fast switching times when switching between on and off states.
The P-N junction of the JANTX1N3035B-1 is also designed for voltage regulation. The barrier layer prevents large changes in current when a voltage fluctuates, allowing for more stable voltage regulation to occur. This can be very beneficial in applications with large changes in input voltage and power systems that require high amounts of performance and stability in voltage regulation.
The JANTX1N3035B-1 has an operating temperature range of -65°C to 200°C. This makes it suitable for use in applications where temperature extremes occur. It also has an upper temperature limit of 200°C, making it well suited for use in high-temperature applications. This can also help protect the device from destruction in the presence of high thermal loads.
The JANTX1N3035B-1 is a very reliable single zener diode that offers excellent signal and frequency response. It\'s low dynamic resistance and fast switching times between on and off states make it suitable for use in high power systems, while its high temperature tolerance makes it ideal for use in applications where temperature extremes occur. It also provides excellent voltage regulation, making it suitable for use in low power and sensitive systems.
The specific data is subject to PDF, and the above content is for reference
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