JANTX1N3332B

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The JANTX1N3332B is a silicon zener single diode from ON Semiconductor. It is a device with a nominal zener voltage of 3.3V and a maximum power dissipation of 500mW.

The JANTX1N3332B is designed to protect circuits against overvoltage conditions. It is primarily used in portable electronics, such as laptops, phones and other devices. It can also be used in automotive and industrial applications, as well as scientific instrumentation.

The JANTX1N3332B has a low forward voltage drop, which minimizes the electricity losses across the diode. The device operates over a wide temperature range, from -65°C to +170°C, making it suitable for a variety of applications.

The basic principle of operation of a zener diode is avalanche breakdown. When a zener diode is reverse biased, the depletion region around the junction begins to expand, leading to an increase in the electric field across it. When the electric field becomes strong enough, the covalent bonds in the crystal lattice start to break, allowing current to flow through the diode. This current then flows through the diode, resulting in a voltage drop across it. This voltage drop is known as the breakdown voltage, or zener voltage.

The JANTX1N3332B is designed to operate most efficiently when a current of 1mA is applied to it. This gives it a breakdown voltage of 3.3V, which is ideal for a number of applications. It can also be used in applications where a higher current is applied, as the device is rated for up to 5mA. As the current drawn through the device increases, the voltage drop across it decreases.

The JANTX1N3332B is available in a variety of packages, including standard 2-pin and 3-pin SOT-23 packages, as well as surface mount SMA and SC-59 packages. This makes it suitable for a wide range of applications, from small-scale projects to large-scale production.

In summary, the JANTX1N3332B zener single diode from ON Semiconductor is a low power, low forward voltage drop device with a breakdown voltage of 3.3V. It operates over a wide temperature range, making it suitable for a variety of applications. It is available in a variety of packages, making it suitable for both small and large scale projects.

The specific data is subject to PDF, and the above content is for reference