Allicdata Part #: | 1086-16819-ND |
Manufacturer Part#: |
JANTX1N3768 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 1KV 35A DO203AB |
More Detail: | Diode Standard 1000V 35A Chassis, Stud Mount DO-5 |
DataSheet: | JANTX1N3768 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/297 |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 35A |
Voltage - Forward (Vf) (Max) @ If: | 2.3V @ 500A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 1000V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AB, DO-5, Stud |
Supplier Device Package: | DO-5 |
Operating Temperature - Junction: | -65°C ~ 175°C |
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The JANTX1N3768 is a single diode rectifier product. It is an ideal choice for a wide array of applications, ranging from rectifying current to providing protection against voltage transients. The JANTX1N3768 is a fast, rugged, low power consuming, low forward voltage drop device that can be operated at a variety of temperatures. It is a perfect solution for applications that require both high efficiency and reliability.
The JANTX1N3768 is a silicon planar epitaxial power diode in a two lead, plastic case. It is constructed of a PN junction between a P-type silicon substrate and N-type epitaxial layer. The JANTX1N3768 is designed to provide protection against surge current, transient voltage drops, and reverse recovery of the output current. The JANTX1N3768 has a low forward voltage drop and allows the nominal rated current to flow at the lowest possible voltage. The JANTX1N3768 is designed to operate over a wide temperature range and is UL certified to meet all safety standards.
The working principle of the JANTX1N3768 diode is based on the P-N junction. The P-N junction is created when a positively-charged metal (or metal oxide) layer is sandwiched between two layers of negatively-charged metal or metal oxide. The P-N junction allows the current to move in one direction and blocks the current from flowing in the other direction. This is the basic operation of a rectifier diode. It is important to note that the maximum power rating of the JANTX1N3768 is proportional to the area of the P-N junction.
The JANTX1N3768 can be used in a variety of application fields, including rectifying AC power, providing transient voltage protection, and suppressing reverse current. For applications where a small amount of current is needed, the JANTX1N3768 can be used as a rectifier diode, providing a controlled forward voltage drop between the input and output terminals. This allows energy to move in one direction without any adverse effects. The device can also be used for providing protection against electrical transients, where it will help absorb and dissipate a surge in current, preventing it from damaging devices connected further down the circuit. Finally, the JANTX1N3768 can be used to suppress reverse current, meaning that it will block current from flowing back from the load to the supply.
The JANTX1N3768 is an ideal choice for a wide range of industrial, automotive and consumer electronic applications. The device is cost effective, reliable and has a long operating life, making it suitable for long-term use. It is UL certified to meet all safety standards, and its low forward voltage drop makes it an energy efficient component. Furthermore, the device is designed to be robust and reliable, making it ideal for use in environments that require a high degree of protection against surges and transients.
The specific data is subject to PDF, and the above content is for reference
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