Allicdata Part #: | 1086-15710-ND |
Manufacturer Part#: |
JANTX1N3910A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 100V 50A DO203AB |
More Detail: | Diode Standard 100V 50A Chassis, Stud Mount DO-203... |
DataSheet: | JANTX1N3910A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/308 |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 50A |
Voltage - Forward (Vf) (Max) @ If: | 1.4V @ 50A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 200ns |
Current - Reverse Leakage @ Vr: | 15µA @ 100V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AB, DO-5, Stud |
Supplier Device Package: | DO-203AB (DO-5) |
Operating Temperature - Junction: | -65°C ~ 150°C |
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The JANTX1N3910A diode is classified as a single rectifier diode. It is characterized as a low-power current-controlled semiconductor device. The device is used in applications requiring intense voltage control, such as LED lighting, automotive, consumer electronics, industrial, and medical products. Furthermore, it is designed to regulate and protect against extreme overvoltages in a wide range of applications.
The JANTX1N3910A power diode is typically used with a single pole-double throw (SPDT) switch and is rated for operation at 1 A maximum forward current and up to 9.4 A peak. Its silicon-based construction offers superior reliability, robust performance and superior temperature capability. Moreover, it offers high-efficiency conversion and low power consumption. In addition, the low-power consumption, high-frequencies, and fast recovery characteristic of the device provide significant advantages over some traditional rectifiers.
The JANTX1N3910A comes in a TO-220-3L package, allowing it to fit into a standard mounting clip and require minimal additional hardware and components. It is designed to operate at temperatures ranging from -55 to +200 °C, enabling it to function in harsher environments. Additionally, it provides up to 36V of breakdown voltage, ensuring that it can handle higher voltage loads.
The working principle of the JANTX1N3910A involves its Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This provides an effective control of the voltage through the gate control, allowing the device to switch between forward and reverse bias conditions. This allows for fast switching and high-efficiency power conversion. Additionally, the low-power consumption and high-frequency characteristic make it ideal for applications such as switching power supplies, switch mode power supplies and power converters.
The wide range of applications and functionality of the JANTX1N3910A make it an ideal rectifier for applications in LED lighting, automotive, consumer electronics, industrial, and medical products. Furthermore, its silicon-based construction, high-efficiency power conversion, low power consumption, fast recovery, and unique features make it a reliable choice for high-power current control. With its superior reliability and robust performance, this device is an ideal fit for a broad range of applications.
The specific data is subject to PDF, and the above content is for reference
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